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Microwave integrated circuit amplifier designs submitted to Qorvo for fabrication with 0.09-æm high-electron-mobility transistors (HEMTs) using 2-mil gallium nitride (GaN) on silicon carbide / by John E. Penn.
- Format:
- Book
- Government document
- Author/Creator:
- Penn, John E., author.
- Series:
- ARL-TN ; 0743.
- ARL-TN ; 0743
- Language:
- English
- Subjects (All):
- Microwave integrated circuits--Design and construction.
- Microwave integrated circuits.
- Microwave amplifiers--Design and construction.
- Microwave amplifiers.
- Genre:
- technical reports.
- Technical reports.
- Physical Description:
- 1 online resource (vi, 8 pages) : color illustrations
- Place of Publication:
- Adelphi, MD : US Army Research Laboratory, March 2016.
- Notes:
- "Mar 2016."
- "Approved for public release; distribution unlimited."
- Includes bibliographical references (page 6).
- Online resource, PDF version; title from title page (ARL, viewed August 14, 2019).
- OCLC:
- 1112365152
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