Correlative nm-scale nonuniformity of active charge carriers and electrical potential along both the plane-view and depth directions in group-V-doped CdTe thin films: preprint / Chun-Sheng Jiang [and 4 others].

Format:

• Book
• Government document

Author/Creator:

• Jiang, C.-S. (Chun-Sheng), author.

Contributor:

• National Renewable Energy Laboratory (U.S.), issuing body.
• United States. Department of Energy, sponsoring body.

Series:

• Conference paper (National Renewable Energy Laboratory (U.S.)) ; NREL/CP-5K00-76040.
• Conference paper / NREL ; NREL/CP-5K00-76040

Language:

English

Subjects (All):

• Thin films--Electric properties--United States.
• Thin films--Optical properties.
• Cadmium telluride--United States--Surfaces.
• Microscopy--United States--Equipment and supplies.
• Nanotechnology--Research--United States.
• Microscopy--Equipment and supplies.
• Nanotechnology--Research.
• Thin films--Electric properties.
• United States.

Physical Description:

1 online resource (5 pages) : color illustrations.

Other Title:

Correlative nanometer-scale nonuniformity of active charge carriers and electrical potential along both the plane-view and depth directions in group-V-doped CdTe thin films: preprint

Place of Publication:

Golden, CO : National Renewable Energy Laboratory, August 2020.

Notes:

• In scope of the U.S. Government Publishing Office Cataloging and Indexing Program (C&I) and Federal Depository Library Program (FDLP).
• "August 2020."
• "Presented at the 47th IEEE Photovoltaic Specialists Conference (PVSC 47), June 15-August 21, 2020"--Cover.
• Includes bibliographical references (pages 4-5).
• Description based on online resource; title from PDF title page (NREL, viewed February 22, 2023).

OCLC:

1371987477