2 options
Correlative nm-scale nonuniformity of active charge carriers and electrical potential along both the plane-view and depth directions in group-V-doped CdTe thin films: preprint / Chun-Sheng Jiang [and 4 others].
- Format:
- Book
- Government document
- Author/Creator:
- Jiang, C.-S. (Chun-Sheng), author.
- Series:
- Conference paper (National Renewable Energy Laboratory (U.S.)) ; NREL/CP-5K00-76040.
- Conference paper / NREL ; NREL/CP-5K00-76040
- Language:
- English
- Subjects (All):
- Thin films--Electric properties--United States.
- Thin films--Optical properties.
- Cadmium telluride--United States--Surfaces.
- Microscopy--United States--Equipment and supplies.
- Nanotechnology--Research--United States.
- Microscopy--Equipment and supplies.
- Nanotechnology--Research.
- Thin films--Electric properties.
- United States.
- Physical Description:
- 1 online resource (5 pages) : color illustrations.
- Other Title:
- Correlative nanometer-scale nonuniformity of active charge carriers and electrical potential along both the plane-view and depth directions in group-V-doped CdTe thin films: preprint
- Place of Publication:
- Golden, CO : National Renewable Energy Laboratory, August 2020.
- Notes:
- In scope of the U.S. Government Publishing Office Cataloging and Indexing Program (C&I) and Federal Depository Library Program (FDLP).
- "August 2020."
- "Presented at the 47th IEEE Photovoltaic Specialists Conference (PVSC 47), June 15-August 21, 2020"--Cover.
- Includes bibliographical references (pages 4-5).
- Description based on online resource; title from PDF title page (NREL, viewed February 22, 2023).
- OCLC:
- 1371987477
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