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Characterization of 4H <000-1> silicon carbide films grown by solvent-laser heated floating zone / Andrew A. Woodworth [and four others].
- Format:
- Book
- Government document
- Author/Creator:
- Woodworth, Andrew A., author.
- Series:
- NASA technical memorandum ; 217708.
- NASA/TM ; 2012-217708
- Language:
- English
- Subjects (All):
- Crystal growth.
- Diffraction patterns.
- Physical Description:
- 1 online resource (6 pages) : illustrations.
- Place of Publication:
- Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, 2012.
- Notes:
- Title from title screen (viewed on Aug. 21, 2014).
- "September 2012."
- "Prepared for the 2012 Spring Meeting and Exhibit sponsored by the Materials Research Society, San Francisco, California, April 9-13, 2012."
- Includes bibliographical references (page 6).
- OCLC:
- 888238118
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