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Surface characteristics of etched and non-etched silicon germanium (SiGe)/Si graded structure with varying Ge concentration grown by ultra-high vacuum (UHV)/chemical vapor deposition (CVD) for optoelectronic and power conversion applications / Fred Semendy [and three others].
- Format:
- Book
- Government document
- Author/Creator:
- Semendy, Fred, author.
- Series:
- ARL-TR (Aberdeen Proving Ground, Md.) ; 6128.
- ARL-TR ; 6128
- Language:
- English
- Subjects (All):
- Surfaces (Technology)--Analysis.
- Surfaces (Technology).
- Chemical vapor deposition.
- Optoelectronic devices.
- Physical Description:
- 1 online resource (vi, 16 pages) : color illustrations.
- Place of Publication:
- Adelphi, MD : Army Research Laboratory, 2012.
- Notes:
- Title from title screen (viewed Jan. 17, 2013).
- "September 2012."
- Includes bibliographical references (pages 11-12).
- Other Format:
- Print version: Semendy, Fred. Surface characteristics of etched and non-etched silicon germanium (SiGe)/Si graded structure with varying Ge concentration grown by ultra-high vacuum (UHV)/chemical vapor deposition (CVD) for optoelectronic and power conversion applications
- OCLC:
- 824557063
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