2 options
Changes in minority-carrier lifetime in silicon and gallium arsenide resulting from irradiation with 22- and 40-MeV protons / by Marvin E. Beatty.
Connect to full text Available online
View online- Format:
- Book
- Government document
- Author/Creator:
- Beatty, Marvin E., author.
- Series:
- NASA technical note ; D-5028.
- NASA technical note ; NASA TN D-5028
- Language:
- English
- Subjects (All):
- Gallium arsenide--Effect of radiation on.
- Gallium arsenide.
- Extraterrestrial radiation.
- Semiconductors--Effect of radiation on.
- Semiconductors.
- Silicon--Effect of radiation on.
- Physical Description:
- 1 online resource (25 pages) : illustrations.
- Place of Publication:
- Washington, D.C. : National Aeronautics and Space Administration, February 1969.
- Notes:
- "February 1969."
- Includes bibliographical references (pages 15-16).
- Description based on online resource, PDF version; title from title page (NASA, viewed on Nov. 16, 2020).
- Other Format:
- Print version: Beatty, Marvin E. (Marvin Eddleman), 1940- Changes in minority-carrier lifetime in silicon and gallium arsenide resulting from irradiation with 22- and 40-MeV protons
- OCLC:
- 785280925
The Penn Libraries is committed to describing library materials using current, accurate, and responsible language. If you discover outdated or inaccurate language, please fill out this feedback form to report it and suggest alternative language.