2 options
Resolution changes in lithium-drifted silicon semiconductor detectors irradiated with 0.5, 1.0, 2.0, and 3.0 MeV electrons / by Herbert D. Hendricks and Donald H. Phillips.
- Format:
- Book
- Government document
- Author/Creator:
- Hendricks, Herbert D., author.
- Phillips, Donald H., author.
- Series:
- NASA technical note ; D-4901.
- NASA/TN ; D-4901
- Language:
- English
- Subjects (All):
- Semiconductors.
- Semiconductor nuclear counters.
- semiconductor.
- Medical Subjects:
- Semiconductors.
- Physical Description:
- 1 online resource (30 pages) : illustrations
- Place of Publication:
- Washington, D.C. : National Aeronautics and Space Administration, November 1968.
- Notes:
- "November 1968."
- Includes bibliographical references (pages 9-10).
- Online resource, PDF version; title from title page (NASA, viewed on Apr 19, 2021).
- Electronic reproduction. [Place of publication not identified]: HathiTrust Digital Library. 2024.
- Other Format:
- Print version: Hendricks, Herbert D. Resolution changes in lithium-drifted silicon semiconductor detectors irradiated with 0.5, 1.0, 2.0, and 3.0 MeV electrons.
- OCLC:
- 761377513
- Access Restriction:
- Use copy Restrictions unspecified
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