Junction transport in epitaxial film silicon heterojunction solar cells : preprint / David L. Young [and others].

Format:

Book

Conference/Event

Government document

Contributor:

Young, David L. (David Levi)

National Renewable Energy Laboratory (U.S.)

Conference Name:

IEEE Photovoltaic Specialists Conference (37th : 2011 : Seattle, Wash.)

Series:

Conference paper (National Renewable Energy Laboratory (U.S.)) ; NREL/CP-5200-50712.

NREL/CP ; 5200-50712

Language:

English

Subjects (All):

Solar cells--Research.

Solar cells.

Photovoltaic cells--Research.

Photovoltaic cells.

Epitaxy.

Genre:

technical reports.

Technical reports

Technical reports.

Physical Description:

1 online resource (4 pages) : color illustrations.

Place of Publication:

[Golden, CO] : National Renewable Energy Laboratory, [2011]

Summary:

We report our progress toward low-temperature hot wire chemical vapor deposition (HWCVD) epitaxial film silicon solar cells on inexpensive seed layers, with a focus on the junction transport physics exhibited by our devices. Heterojunctions of i/p hydrogenated amorphous silicon (a-Si) on our n-type epitaxial crystal Si on n++ Si wafers show space-charge-region recombination, tunneling or diffusive transport depending on both epitaxial Si quality and the applied forward voltage.

Notes:

Title from title screen (viewed on September 12, 2011).

"July 2011."

"Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), Seattle, Washington, June 19-24, 2011."

Includes bibliographical references (page 4).

OCLC:

751988617