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Temperature-dependent photoluminescence imaging and characterization of a multi-crystalline silicon solar cell defect area : preprint / Steve Johnston [and others].

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Format:
Book
Conference/Event
Government document
Contributor:
Johnston, Steven Wade
National Renewable Energy Laboratory (U.S.)
Conference Name:
IEEE Photovoltaic Specialists Conference (37th : 2011 : Seattle, Wash.)
Series:
Conference paper (National Renewable Energy Laboratory (U.S.)) ; NREL/CP-5200-50706.
NREL/CP ; 5200-50706
Language:
English
Subjects (All):
Photoluminescence.
Photovoltaic cells--Research.
Photovoltaic cells.
Solar cells--Testing.
Solar cells.
Defects.
photoluminescence.
Genre:
technical reports.
Technical reports
Technical reports.
Physical Description:
1 online resource (6 pages) : illustrations (chiefly color).
Place of Publication:
[Golden, CO] : National Renewable Energy Laboratory, [2011]
Summary:
Photoluminescence (PL) imaging is used to detect areas in multi-crystalline silicon that appear dark in band-to-band imaging due to high recombination. Steady-state PL intensity can be correlated to effective minority-carrier lifetime, and its temperature dependence can provide additional lifetime-limiting defect information. An area of high defect density has been laser cut from a multi-crystalline silicon solar cell. Both band-to-band and defect-band PL imaging have been collected as a function of temperature from ~85 to 350 K. Band-to-band luminescence is collected by an InGaAs camera using a 1200-nm short-pass filter, while defect band luminescence is collected using a 1350-nm long pass filter. The defect band luminescence is characterized by cathodo-luminescence. Small pieces from adjacent areas within the same wafer are measured by deep-level transient spectroscopy (DLTS). DLTS detects a minority-carrier electron trap level with an activation energy of 0.45 eV on the sample that contained defects as seen by imaging.
Notes:
Title from title screen (viewed August 1, 2011).
"July 2011."
"Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), Seattle, Washington, June 19-24, 2011."
Includes bibliographical references (pages 5-6).
OCLC:
743927810

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