Defect-band emission photoluminescence imaging on multi-crystalline Si solar cells : preprint / Fei Yan [and others].

Format:

Book

Conference/Event

Government document

Contributor:

Yan, Fei

National Renewable Energy Laboratory (U.S.)

Colorado State University

Calisolar.

Conference Name:

IEEE Photovoltaic Specialists Conference (37th : 2011 : Seattle, Wash.)

Series:

Conference paper (National Renewable Energy Laboratory (U.S.)) ; NREL/CP-5200-50725.

NREL/CP ; 5200-50725

Language:

English

Subjects (All):

Photovoltaic cells--Research.

Photovoltaic cells.

Silicon solar cells--Design and construction.

Silicon solar cells.

Photoluminescence.

photoluminescence.

Genre:

technical reports.

Technical reports

Technical reports.

Physical Description:

1 online resource (4 pages) : illustrations (some color).

Place of Publication:

[Golden, CO] : National Renewable Energy Laboratory, [2011]

Summary:

Defect-band photoluminescence (PL) imaging with an InGaAs camera was applied to multicrystalline silicon (mc-Si) wafers, which were taken from different heights of different Si bricks. Neighboring wafers were picked at six different processing steps, from as-cut to post-metallization. By using different cut-off filters, we were able to separate the band-to-band emission images from the defect-band emission images. On the defect-band emission images, the bright regions that originate from the grain boundaries and defect clusters were extracted from the PL images. The area fraction percentage of these regions at various processing stages shows a correlation with the final cell electrical parameters.

Notes:

Title from title screen (viewed August 8, 2011).

"July 2011."

"Presented at the 37th IEEE Photovoltaic Specialists Conference (PVSC 37), Seattle, Washington, June 19-24, 2011."

Includes bibliographical references (page 4).

OCLC:

745906086