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Design of Shallow p-type Dopants in ZnO (Presentation) / Su-Huai Wei, J. Li, and Y. Yan.
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- Book
- Conference/Event
- Government document
- Author/Creator:
- Wei, Su-Huai
- Conference Name:
- IEEE Photovoltaic Specialists Conference (33rd : 2008 : San Diego, Calif.)
- Series:
- NREL/PR ; 520-43248.
- NREL/PR ; 520-43248
- Language:
- English
- Subjects (All):
- Semiconductor doping.
- Doped semiconductors.
- Crystals--Defects.
- Crystals.
- Genre:
- proceedings (reports)
- Conference papers and proceedings
- Conference papers and proceedings.
- Physical Description:
- 1 online resource (32 pages) : color illustrations
- Place of Publication:
- Washington, D.C. : United States. Dept. of Energy ; Oak Ridge, Tenn. : Distributed by the Office of Scientific and Technical Information, U.S. Dept. of Energy, 2008.
- Summary:
- ZnO is a promising material for short wave-length opto-electronic devices such as UV lasers and LEDs due to its large exciton binding energy and low material cost. ZnO can be doped easily n-type, but the realization of stable p-type ZnO is rather difficult. Using first-principles band structure methods the authors address what causes the p-type doping difficulty in ZnO and how to overcome the p-type doping difficulty in ZnO.
- Notes:
- Published through the Information Bridge: DOE Scientific and Technical Information.
- 05/01/2008.
- Presented at the 33rd IEEE Photovoltaic Specialist Conference, 11-16 May 2008 in San Diego, California.
- National Renewable Energy Laboratory (NREL), Golden, CO.
- OCLC:
- 727355702
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