Graphene-based nanoelectronics / Osama M. Nayfeh [and others].

Format:

Book

Government document

Contributor:

Nayfeh, Osama M.

U.S. Army Research Laboratory

Series:

ARL-TR (Aberdeen Proving Ground, Md.) ; 5451.

ARL-TR ; 5451

Language:

English

Subjects (All):

Nanoelectronics.

Graphene.

Physical Description:

1 online resource (viii, 36 pages) : color illustrations.

Place of Publication:

Adelphi, MD : Army Research Laboratory, [2011]

Summary:

A large program in graphene-based nanoelectronics has been initiated at the U.S. Army Research Laboratory (ARL) under the auspices of the ARL Director's Strategic Initiative (DSI). An array of capabilities for graphene growth, characterization, device fabrication, and device modeling has been established, and expertise has been gained in all facets of the research. Significant results have been achieved, including the world's highest reported fT for a graphene field-effect transistor (GFET) fabricated from chemical vapor deposition (CVD)-grown graphene; and a first-generation graphene-based supercapacitor. This research could potentially have enormous benefits for the American Soldier including smaller and more efficient power electronics and communication systems, transparent and flexible electronics, and wearable electronics.

Notes:

Title from title screen (viewed on Dec. 2, 2011).

"February 2011."

Includes bibliographical references (pages 27-30).

Other Format:

Print version: Graphene-based nanoelectronics

OCLC:

713664641