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Static and turn-on switching characteristics of 4H-Silicon Carbide SITs to 200 °C / Janis M. Niedra, Gene E. Schwarze ; prepared for the Third International Energy Conversion Engineering Conference sponsored by the American Institute of Aeronautics and Astronautics, San Francisco, California, August 15-18, 2005.
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- Book
- Conference/Event
- Government document
- Author/Creator:
- Niedra, Janis M.
- Conference Name:
- International Energy Conversion Engineering Conference (3rd : 2005 : San Francisco, Calif.)
- Series:
- NASA technical memorandum ; 213996.
- NASA/TM- ; 2005-213996
- Language:
- English
- Subjects (All):
- Transistors.
- Electric currents.
- Electromotive force.
- Electrostatics.
- transistors.
- Physical Description:
- 1 online resource (9 pages) : illustrations.
- Place of Publication:
- Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, [2005]
- Notes:
- Title from title screen (viewed on Jan. 3, 2011).
- "December 2005."
- "AIAA-2005-5718."
- Includes bibliographical references (page 9).
- OCLC:
- 694791364
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