2 options
Switching characteristics of a 4H-SiC based bipolar junction transistor to 200 °C / Janis M. Niedra.
Connect to full text Available online
View online- Format:
- Book
- Government document
- Author/Creator:
- Niedra, Janis M.
- Series:
- NASA contractor report ; NASA CR-214257.
- NASA/CR- ; 2006-214257
- Language:
- English
- Subjects (All):
- Junction transistors.
- Bipolar transistors.
- Dead loads (Mechanics).
- Electric currents.
- Electromotive force.
- Electrostatics.
- dead loads.
- Physical Description:
- 1 online resource (6 pages) : illustrations.
- Place of Publication:
- Cleveland, Ohio : National Aeronautics and Space Administration, Glenn Research Center, [2006]
- Notes:
- Title from title screen (viewed on Oct. 20, 2010).
- "November 2006."
- OCLC:
- 671240632
The Penn Libraries is committed to describing library materials using current, accurate, and responsible language. If you discover outdated or inaccurate language, please fill out this feedback form to report it and suggest alternative language.