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Growth of low defect density gallium nitride (GaN) films on novel tantalum carbide (TaC) substrates for improved device performance / M.A. Derenge [and others].
Connect to full text Available online
View online- Format:
- Book
- Government document
- Author/Creator:
- Derenge, M. A.
- Series:
- ARL-TR (Aberdeen Proving Ground, Md.) ; 4818.
- ARL-TR ; 4818
- Language:
- English
- Subjects (All):
- Gallium nitride.
- Physical Description:
- 1 online resource (vi, 26 pages)
- Place of Publication:
- Adelphi, MD : Army Research Laboratory, [2009]
- Notes:
- Title from title screen (viewed on July 6, 2009).
- "May 2009."
- OCLC:
- 422549730
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