Growth of low defect density gallium nitride (GaN) films on novel tantalum carbide (TaC) substrates for improved device performance / M.A. Derenge [and others].

Format:

• Book
• Government document

Author/Creator:

• Derenge, M. A.

Contributor:

• U.S. Army Research Laboratory

Series:

• ARL-TR (Aberdeen Proving Ground, Md.) ; 4818.
• ARL-TR ; 4818

Language:

English

Subjects (All):

• Gallium nitride.

Physical Description:

1 online resource (vi, 26 pages)

Place of Publication:

Adelphi, MD : Army Research Laboratory, [2009]

Notes:

• Title from title screen (viewed on July 6, 2009).
• "May 2009."

OCLC:

422549730