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Theory and operation of cold field-effect transistor (FET) external parasitic parameter extraction / by Benjamin D. Huebschman, Pankaj B. Shah, and Romeo Del Rosario.
Connect to full text Available online
View online- Format:
- Book
- Government document
- Author/Creator:
- Huebschman, Benjamin D.
- Series:
- ARL-TR (Aberdeen Proving Ground, Md.) ; 4812.
- ARL-TR ; 4812
- Language:
- English
- Subjects (All):
- Field-effect transistors.
- Physical Description:
- 1 online resource (iv, 16 pages)
- Place of Publication:
- Adelphi, MD : Army Research Laboratory, [2009]
- Notes:
- Title from title screen (viewed on July 20, 2009).
- "May 2009."
- OCLC:
- 426526735
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