My Account Log in

2 options

Development of gate and base drive using SiC junction field effect transistors / by Timothy E. Griffin.

Connect to full text Available online

View online

U.S. Government Documents Available online

View online
Format:
Book
Author/Creator:
Griffin, Timothy E.
Contributor:
U.S. Army Research Laboratory
Series:
ARL-TR (Aberdeen Proving Ground, Md.) ; 4475.
ARL-TR ; 4475
Language:
English
Subjects (All):
Field-effect transistors.
Junction transistors.
Physical Description:
1 online resource (iv, 16 pages)
Place of Publication:
Adelphi, Md. : Army Research Laboratory, [2008]
Notes:
Title from title screen (viewed on May 26, 2009).
"May 2008."
OCLC:
351632181

The Penn Libraries is committed to describing library materials using current, accurate, and responsible language. If you discover outdated or inaccurate language, please fill out this feedback form to report it and suggest alternative language.

Find

Home Release notes

My Account

Shelf Request an item Bookmarks Fines and fees Settings

Guides

Using the Find catalog Using Articles+ Using your account