2 options
Band-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor / W.D. Sun [and others].
- Format:
- Book
- Government document
- Series:
- ARL-TR (Aberdeen Proving Ground, Md.) ; 1933.
- ARL-TR ; 1933
- Language:
- English
- Subjects (All):
- Field-effect transistors.
- Quantum wells.
- Photoluminescence.
- photoluminescence.
- Physical Description:
- 1 online resource (iii, 13 pages)
- Place of Publication:
- Adelphi, MD : Army Research Laboratory, [1999]
- Notes:
- Title from title screen (viewed February 26, 2009).
- "May 1999."
- Includes bibliographical references (page 7).
- Electronic reproduction. Adelphi, MD : Army Research Laboratory, [1999] Mode of access: World Wide Web. System requirements: Adobe Acrobat reader.
- Other Format:
- Band-bending effect of low-temperature GaAs on a pseudomorphic modulation-doped field-effect transistor
- OCLC:
- 310979505
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