2 options
Computer simulations of edge effects in a small-area mesa N-P junction diode : preprint / J. Appel and B. Sopori, N.M. Ravindra.
- Format:
- Book
- Author/Creator:
- Appel, J.
- Series:
- Conference paper (National Renewable Energy Laboratory (U.S.)) ; NREL/CP-520-45002.
- NREL/CP ; 520-45002
- Language:
- English
- Subjects (All):
- Photovoltaic cells--Computer simulation.
- Photovoltaic cells.
- Solar cells--Research.
- Solar cells.
- Genre:
- technical reports.
- Technical reports
- Technical reports.
- Physical Description:
- 1 online resource (6 pages)
- Place of Publication:
- [Golden, Colo.] : National Renewable Energy Laboratory, [2009]
- Summary:
- The influence of edges on the performance of small-area solar cells is determined using a modified commercial, finite-element software package. The n+/p mesa device is modeled as having a sub-oxide layer on the edges, which acquires positive charges that result in development of an electric field within the device. Our computer simulations include generation/ recombination at the diode edges as well as the influence of light on the recombination characteristics of the edges. We present a description of our model, dark and illuminated characteristics of devices with various surface charge concentrations, and the dynamics of carrier generation/recombination. The influence of edge geometry on diode performance is determined.
- Notes:
- Title from title screen (viewed February 27, 2009).
- "February 2009."
- "Presented at the Materials Research Society (MRS), Fall Meeting 2008, Boston, Massachusetts, December 1-5, 2008."
- OCLC:
- 311084625
The Penn Libraries is committed to describing library materials using current, accurate, and responsible language. If you discover outdated or inaccurate language, please fill out this feedback form to report it and suggest alternative language.