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Novel high efficiency photovoltaic devices based on the III-N material system : final technical report, 7 December 2005-29 August 2008 / C. Honsberg, W.A. Doolittle, and I. Ferguson.
- Format:
- Book
- Author/Creator:
- Honsberg, C. (Christiana B.)
- Language:
- English
- Subjects (All):
- Photovoltaic cells--Research.
- Photovoltaic cells.
- Solar cells--Design and construction.
- Solar cells.
- Physical Description:
- 1 online resource (11 pages)
- Other Title:
- Novel high efficiency pv devices based on the 3-nitride material system
- Place of Publication:
- Golden, Colo. : National Renewable Energy Laboratory, [2008]
- Summary:
- The current work by University of Delaware researchers sought to understand InGaN as the potential material for photovoltaics. Phase separation was identified as a key loss mechanism. Phase-separated material (a lower bandgap) controls the open-circuit voltage, while the non-phase separated material (higher bandgap) controls the absorption. Phase separation in InGaN layers was controlled via optimization of growth conditions and device thickness.
- Notes:
- Title from title screen (viewed October 21, 2008).
- "October 2008."
- OCLC:
- 263025858
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