Surface analysis of reactive ion etched PZT thin films in SF6 plasma / Eugene Zakar.

Format:

Book

Government document

Author/Creator:

Zakar, Eugene

Contributor:

U.S. Army Research Laboratory

Series:

ARL-TR (Aberdeen Proving Ground, Md.) ; 4284.

ARL-TR ; 4284

Language:

English

Subjects (All):

Surfaces (Technology)--Analysis.

Surfaces (Technology).

Thin films.

Piezoelectricity.

Physical Description:

1 online resource (iv, 10 pages) : illustrations

Place of Publication:

Adelphi, MD : Army Research Laboratory, [2007]

Summary:

Reactive ion etching of sol-gel deposited Pb(Zr(0.52) Ti(0.48)03 thin films was performed in SF6 plasmas. Etch rate was determined as a function of cathode power and chamber pressure, attaining a value of 65 nm/min at 300 W. Auger electron spectroscopy measurements revealed an excess Pb 10 nm thin layer on as-deposited film surfaces. X -ray photoelectron spectroscopy measurements showed the existence of ZrF4 and PbS04 species on etched surfaces, in addition to traces of S and F. These measurements also indicated that Ti is relatively easy to remove while Pb removal is the rate limiting step in the etch process.

Notes:

Title from title screen (viewed on February 23, 2012).

"September 2007."

Includes bibliographical references (pages 8-9).

Other Format:

Print version: Zakar, Eugene. Surface analysis of reactive ion etched PZT thin films in SF6 plasma

OCLC:

227954836