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Effect of Sb on the properties of GalnP top cells / J.M. Olson, W.E. McMahon, and S. Kurtz.
- Format:
- Book
- Government document
- Author/Creator:
- Olson, J. M. (Jerry M.)
- Series:
- Conference paper (National Renewable Energy Laboratory (U.S.)) ; NREL/CP-520-39903.
- NREL/CP ; 520-39903
- Language:
- English
- Subjects (All):
- Solar cells--Reliability.
- Solar cells.
- Photovoltaic cells--Research.
- Photovoltaic cells.
- Gallium-indium phosphide.
- Antimony.
- antimony.
- Physical Description:
- 1 online resource (4 pages) : illustrations
- Other Title:
- Effect of antimony on the properties of gallium indium phosphide top cells
- Place of Publication:
- Golden, CO : National Renewable Energy Laboratory, 2006.
- Summary:
- It has been shown that the presence of antimony on the surface of GaInP during its growth suppresses the ordering process and increases the band gap. In this paper, we study the effects of Sb on the properties of GaInP top cells. We show that, in addition to raising the band gap of GaInP, it also increases the incorporation of Zn and changes the relative incorporation of Ga and In.
- Notes:
- Title from title screen (viewed on August 21, 2007).
- "May 2006."
- "Presented at the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), Waikoloa, Hawaii, May 7-12, 2006."
- OCLC:
- 166268733
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