Cross-sectional conductive atomic force microscopy of the CdTe/CdS solar cells : effects of etching and back-contact processes : preprint / H.R. Moutinho [and others].

Format:

Book

Government document

Contributor:

Moutinho, Helio R.

National Renewable Energy Laboratory (U.S.)

Series:

Conference paper (National Renewable Energy Laboratory (U.S.)) ; NREL/CP-520-39802.

NREL/CP ; 520-39802

Language:

English

Subjects (All):

Photovoltaic cells--Research.

Photovoltaic cells.

Atomic force microscopy.

Surfaces (Technology)--Analysis.

Surfaces (Technology).

Grain boundaries.

Solar cells--Reliability.

Solar cells.

Physical Description:

1 online resource (4 pages)

Other Title:

Cross sectional conductive atomic force microscopy of the Cadmium Telluride Cadmium Sulfide solar cells

Place of Publication:

Golden, CO : National Renewable Energy Laboratory, 2006.

Summary:

We investigated the effects of the etching processes using bromine and nitric-phosphoric acid solutions, as well as of Cu, in the bulk electrical conductivity of CdTe/CdS solar cells using conductive atomic force microscopy (C-AFM). Although the etching process can create a conductive layer on the surface of the CdTe, the layer is very shallow. In contrast, the addition of a thin layer of Cu to the surface creates a conductive layer inside the CdTe that is not uniform in depth, is concentrated at grains boundaries, and may short circuit the device if the CdTe is too thin. The etching process facilitates the Cu diffusion and results in thicker conductive layers. The existence of this inhomogeneous conductive layer directly affects the current transport and is probably the reason for needing thick CdTe in these devices.

Notes:

"Presented at the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), Waikoloa, Hawaii, May 7-12, 2006."

Title from title screen (viewed on September 7, 2007).

"May 2006."

OCLC:

169909693