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On the effect of the film hydrogen content and deposition type on the grain nucleation and grain growth during crystallization of a-Si:H films : preprint / A.H. Mahan [and others].
- Format:
- Book
- Government document
- Series:
- Conference paper (National Renewable Energy Laboratory (U.S.)) ; NREL/CP-520-39901.
- NREL/CP ; 520-39901
- Language:
- English
- Subjects (All):
- Thin films--Research.
- Thin films.
- Physical Description:
- 1 online resource (4 pages)
- Other Title:
- Hydrogenated amorphous silicon films
- Place of Publication:
- Golden, CO : National Renewable Energy Laboratory, [2006]
- Summary:
- We report the effect of the initial film hydrogen content (CH) on the crystallization kinetics, crystallite nucleation rate and grain growth rate when HWCVD and PECVD a-Si:H films are crystallized by annealing at 600°C. We compare the results for HWCVD films of different film CH, and also for HWCVD and PECVD a-Si:H films containing the same initial film CH. We also perform Raman measurements on fully crystallized HWCVD films to explore whether film disorder plays a role in the different XRD FWHMs when different amounts of film hydrogen are evolved.
- Notes:
- Title from title screen (viewed September 21, 2007).
- "Presented at the 2006 IEEE 4th World Conference on Photovoltaic Energy Conversion (WCPEC-4), Waikoloa, Hawaii, May 7-12, 2006."
- "May 2006."
- OCLC:
- 173025349
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