Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching

MLA

Semendy, Fred, et al. Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching. Adelphi, MD : Army Research Laboratory, [2004]

APA

Semendy, F., Boyd, P., Lee, U. & U.S. Army Research Laboratory. (2004). Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching. Adelphi, MD : Army Research Laboratory.

Chicago

Semendy, Fred, Phillip. Boyd, Unchul Lee and U.S. Army Research Laboratory. Etching characteristics and surface analysis of molecular bean epitaxy grown P-type aluminum gallium nitride with boron trichloride/chlorine gases in inductively coupled plasma (ICP) dry etching. Adelphi, MD : Army Research Laboratory, [2004]