Design and fabrication of 850 and 980 nm vertical cavity surface emitting laser / N.C. Das [and others].

Format:

Book

Government document

Author/Creator:

Das, N. C.

Contributor:

U.S. Army Research Laboratory

Series:

ARL-TR (Aberdeen Proving Ground, Md.) ; 3187.

ARL-TR ; 3187

Language:

English

Subjects (All):

Lasers--Design and construction.

Lasers.

Physical Description:

1 online resource (iv, 16 pages) : illustrations (chiefly color).

Place of Publication:

Adelphi, MD : Army Research Laboratory, [2004]

Summary:

Vertical-cavity surface-emitting lasers (VCSEL) are the most suitable light sources for certain optoelectronic applications because of their planner nature of light emission. VCSELs on GaAs substrates were grown by the molecular beam epitaxy technique. In this report we present detailed procedures to design and fabricate 850-nm top-emitting and 980-nm bottom-emitting VCSELs. First a test structure was grown by the molecular-beam epitaxy (MBE) technique and was characterized by reflectance and photoluminescence techniques. We used a wet oxidation process for current confinement in the laser structure. The VCSELs have low threshold current, low voltage drop and hence are suitable for hybridization onto silicon MOS circuits.

Notes:

Title from PDF title screen (viewed on Nov. 23, 2010).

"March 2004."

The original document contains color images.

Includes bibliographical references (page 10).

OCLC:

74266842

Access Restriction:

Approved for public release.