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GaP heteroepitaxy on Si(100) benchmarking surface signals when growing GaP on Si in CVD ambients by Henning Döscher
Springer Nature - Springer Physics and Astronomy (R0) eBooks 2013 English International Available online
View online- Format:
- Book
- Author/Creator:
- Döscher, Henning, author.
- Series:
- Springer theses
- Springer Theses 2190-5053
- Language:
- English
- Subjects (All):
- Optical materials.
- Physics.
- physics.
- Medical Subjects:
- Physics.
- Physical Description:
- 1 online resource
- Place of Publication:
- Cham Springer [2013]
- Language Note:
- English
- Summary:
- Epitaxial integration of III-V semiconductors on silicon substrates has been desired over decades for high application potential in microelectronics, photovoltaics, and beyond. The performance of optoelectronic devices is still severely impaired by critical defect mechanisms driven by the crucial polar-on-nonpolar heterointerface. This thesis reports almost lattice-matched growth of thin gallium phosphide films as a viable model system for III-V/Si(100) interface investigations
- Contents:
- Introduction
- Experimental
- Si(100) surfaces in chemical vapor environments
- GaP(100) and InP(100) surfaces
- GaP growth on Si(100) and anti-phase disorder
- Conclusion
- Notes:
- Includes bibliographical references
- Online resource; title from PDF title page (ebrary, viewed January 6, 2014)
- UofL: Multi-user access
- Other Format:
- Print version:
- ISBN:
- 9783319028804
- 3319028804
- 3319028790
- 9783319028798
- OCLC:
- 868922615
- Access Restriction:
- Restricted for use by site license
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