Physics of Wurtzite nitrides and oxides passport to devices Bernard Gil

Format:

Book

Author/Creator:

Gil, B. (Bernard), author.

Series:

Springer series in materials science ; 0933-033X v. 197

Springer Series in Materials Science 0933-033X volume 197

Language:

English

Subjects (All):

Semiconductors--Materials.

Semiconductors.

Physics.

Optical and Electronic Materials.

Electrical Engineering.

Electronic Circuits and Devices.

Local Subjects:

Physics.

Semiconductors.

Optical and Electronic Materials.

Electrical Engineering.

Electronic Circuits and Devices.

Physical Description:

1 online resource

Place of Publication:

Cham Springer 2014

Language Note:

English

Summary:

This book gives a survey of the current state of the art of a special class of nitrides semiconductors, Wurtzite Nitride and Oxide Semiconductors. It includes properties, growth and applications. Research in the area of nitrides semiconductors is still booming although some basic materials sciences issues were solved already about 20 years ago. With the advent of modern technologies and the successful growth of nitride substrates, these materials currently experience a second birth. Advanced new applications like light-emitters, including UV operating LEDs, normally on and normally off high frequency operating transistors are expected. With progress in clean room technology, advanced photonic and quantum optic applications are envisioned in a close future. This area of research is fascinating for researchers and students in materials science, electrical engineering, chemistry, electronics, physics and biophysics. This book aims to be the ad-hoc instrument to this active field of research

Contents:

Crystallography and Basic Physical Properties

Band Structure and Semi-Classical Theory of the Dielectric Constant

Growth and Structural Characterization(X-Ray, AFM, TEM) of Bulk Materials and Thin Films, Heterostructures

Optical Properties of Wurtzite Epilayers

Optical Properties of Low-Dimensional Nitride Heterostructures

Photonic Devices

Transport Properties in Nitrides

Transistors

Quantum Devices

Machine generated contents note: 1. Basic Crystallography and Other Properties Linked with Symmetry

1.1. Hexagonal Point Symmetry Deduced from the Shape of Natural Wurtzitic Crystals

1.2. Hexagonal Lattice, Its Reticular Planes and Their Description Using Simple Euclidian Geometry

1.3. Four-Index Bravais-Miller Representation of the Orientation of Reticular Planes in Hexagonal Crystals

1.4. Representation of Hexagonal Crystal Directions Using Four Indices

1.5. Reciprocal Lattice

1.6. Orthogonal Basis Set

1.7. Determination of the Lattice Parameters by X-ray Diffraction

1.7.1. Diffraction by a Linear Grating

1.7.2. Diffraction by a Linear Lattice, and by a Planar One

1.7.3. Diffraction by a Three-Dimensional Lattice

1.8. Determination of-Space Symmetry by X-ray Analysis

1.8.1. First Brillouin Zone

1.8.2. Structure Factor

1.8.3. Perfect Wurtzite Structure

1.8.4. Internal Displacement Parameter

1.9. Spontaneous Polarization Along the c Axis

1.10. Defects in the Lattice

1.11. Piezoelectric Effects in Wurtzitic Semi-conductors

1.12. Stresses and Strains

1.12.1. Stress Tensor

1.12.2. Strain Tensor

1.12.3. Stiffness and Compliance Tensors

1.12.4. Stiffness and Compliance Tensors in Wurtzitic Semi-conductors

1.12.5. Energy of a Strained Crystal

1.13. Basic Elements of Group Theory

1.13.1. Concept of Algebraic Groups

1.13.2. Representations of Finite Groups by Matrices

1.13.3. Character Tables and Irreducible Representations

1.13.4. Point Group C6ν

1.13.5. Application of Group Theory to the Calculation of Integrals

1.13.6. Group Theory and Perturbations

1.13.7. Angular Momenta and Group Theory: Simple and Double Groups

1.13.8. Character Tables, Compatibility Table and Multiplication Tables

1.13.9. Translation Group

1.13.10. Space Group References

2. Basics of Growth and Structural Characterization

2.1. Growth of Bulk Crystals

2.2. Principle of Epitaxial Growth Methods

2.2.1. Hydride Vapor Phase Epitaxy

2.2.2. Metal-Organic Vapor Phase Epitaxy

2.2.3. Molecular Beam Epitaxy

2.2.4. Growth of (001)-Oriented GaN on Sapphire Using a Low-Temperature-Grown Thin Buffer Layer

2.3. Epitaxial Lateral Overgrowth Techniques

2.4. Epitaxial Growth of Heterostructures References

3. Electrons and Phonons in Wurtzitic Semi-conductors

3.1. Electrons in a Periodic Potential

3.1.1. Born-Oppenheimer Adiabatic Approximation

3.1.2. One-Electron Approximation

3.1.3. Free Electron Model

3.1.4. Effect of a Periodic Lattice: The Bloch Theorem

3.1.5. Born-von Karman Cycling Conditions and the Concept of Spatial Folding

3.1.6. Effect of a Periodic Lattice: The Formation of Energy Gaps at the Edges of the Brillouin Zone

3.1.7. Concept of the Effective Mass

3.1.8. Tight-Binding Method

3.1.9. Band Structure of Wurtzite Semi-conductors in the Context of a Spinless Tight-Binding Description

3.2. Semi-classical Theory of the Dielectric Function in Crystals

3.2.1. Intuitive Description

3.2.2. Microscopic Theory of the Dielectric Constant

3.2.3. Experimental Values of the Spectral Dependence of the Dielectric Constants of Nitrides

3.2.4. Excitonic Contributions to the Dielectric Constant

3.3. Spin-Orbit Interaction

3.4. κ[→] ρ[→] Method and the Description of Band Dispersion at Zone Center in Wurtzitic Semi-conductors

3.4.1. Simplest Spinless Description of Conduction and Valence Bands Dispersions at Zone Center in Wurtzitic Semi-conductors

3.4.2. Simplest (6 [×] 6) κ · ρ [→] Description for Valence Band Dispersions at Zone Center in Wurtzitic Semi-conductors

3.4.3. Including Strain Field to the κ · ρ [→] Description of Band Dispersion in Wurtzitic Semi-conductors

3.4.4. Simplest (8 [×] 8) κ · ρ [→] Description of Valence Band Dispersions at Zone Center in Wurtzitic Semi-conductors

3.5. Phonons in Wurtzitic Semi-conductors

3.5.1. Longitudinal and Transverse Waves in Continuous Media

3.5.2. Classical Model and the Concept of Normal Coordinates

3.5.3. Group Theory and Normal Modes

3.5.4. Linear Mono-atomic Lattice

3.5.5. Linear Lattice with Two Different Atoms: Acoustic and Optical Branches

3.5.6. Quantum Theory of Lattice Vibrations

3.5.7. Phonons in Wurtzitic Crystals

3.5.8. Contribution of Phonons to the Dielectric Constant in Bulk Wurtzitic Semi-conductors

3.5.9. Phonon Energies in Bulk Wurtzitic Semi-conductors

3.5.10. Phonons in Strained Wurtzitic Semi-conductors

3.5.11. Interaction of Phonons with Plasmons in Doped Wurtzitic Semi-conductors References

4. Optical Properties of Wurtzitic Semiconductors and Epilayers

4.1. Pioneering Reflectivity Experiments on Cadmium Sulfite

4.1.1. Valence Band Ordering in CdS

4.1.2. Excitons and Polaritons in CdS

4.2. Optical Reflectivity in Gallium Nitride

4.2.1. Pioneering Work

4.2.2. Strain-Fields in (0001) Epilayers

4.2.3. Longitudinal-Transverse Splitting and Exciton-Polaritons in GaN

4.2.4. Excitons in GaN Epilayers Grown with Strain on M-plane or A-plane Orientations

4.3. Aluminum Nitride

4.3.1. Optical Properties of Bulk Aluminum Nitride

4.3.2. Strain-Fields in Aluminum Nitride Epilayers

4.3.3. Excitons and Polaritons in AlN

4.4. Zinc Oxide

4.4.1. Optical Properties of Bulk Zinc Oxide

4.4.2. Optical Properties of Zinc Oxide Heteroepitaxies

4.4.3. Polaritons in ZnO

4.5. Indium Nitride

4.6. Excitonic Binding Energies in Wurtzitic Materials: The Influence of Anisotropies

4.6.1. General Description in the Framework of the Effective Mass Approximation

4.6.2. Wave Functions

4.6.3. Numerical Values for Wurtzitic Semiconductors

4.7. Influence of Temperature

4.7.1. Bulk Materials

4.7.2. Reduction of the Band Gap of Bulk Materials When Increasing Temperature

4.7.3. Epilayers

4.8. Photoluminescence of Wurtzitic Semiconductors

4.8.1. Classical Description of the Photoluminescence Process for Free Excitons and Free Carriers

4.8.2. Photoluminescence of Bound Excitons and Other Extrinsic Recombination Processes

4.8.3. High Resolution Spectroscopy in Wurtzite Semiconductors: The GaN Case

4.9. Semiconductor Alloys

4.10. Photonics in High Quality Thin Films References

5. Optical Properties of Quantum Wells and Superlattices

5.1. Basic Theoretical Concepts Borrowed from Quantum Mechanics Text Books

5.1.1. Square Quantum Wells and One-Band Envelope Functions

5.1.2. Strained Layers, Quantum-Confined Stark Effect and One-Band Envelope Functions

5.1.3. Exciton Binding Energy in Quantum Wells

5.1.4. Effects of High Photo Injection Densities in Quantum Wells

5.2. Optical Properties of Polar Quantum Wells

5.2.1. GaN

AlGaN Polar Quantum Wells

5.2.2. ZnO

ZnMgO Polar Quantum Wells

5.2.3. GaInN-Based Polar Quantum Wells

5.3. Temperature: Dependent Photoluminescence Spectroscopy

5.4. Time-Resolved Photoluminescence

5.5. Optical Properties of Non Polar Quantum Wells

5.6. Optical Properties of Semipolar Quantum Wells

5.7. Optical Properties of Quantum Dots

5.7.1. Optical Properties of Polar Quantum Dots References

Notes:

Includes bibliographical references and index

Online resource; title from PDF title page (SpringerLink, viewed July 23, 2014)

Other Format:

Printed edition:

ISBN:

9783319068053

3319068059

3319068040

9783319068046

OCLC:

884436452

Access Restriction:

Restricted for use by site license