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Transition-metal defects in silicon new insights from photoluminescence studies of highly enriched 28-Si Michael Steger

Springer Nature - Springer Physics and Astronomy (R0) eBooks 2013 English International Available online

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Format:
Book
Thesis/Dissertation
Author/Creator:
Steger, Michael
Series:
Springer theses
Springer Theses
Language:
English
Subjects (All):
Semiconductors--Materials.
Semiconductors.
Semiconductors--Defects.
Nanosilicon.
Genre:
theses
dissertations
Academic theses
Physical Description:
1 online resource
Place of Publication:
Berlin New York Springer ©2013
Summary:
The fundamental properties of deep luminescence centres in Si associated with transition metals such as Cu, Ag, Au, and Pt have been a focus of interest for decades, both as markers for these deleterious contaminants, and also in the quest for efficient Si-based light emission. This dissertation presents the results of ultra-high resolution photoluminescence studies of these centres in specially prepared, highly enriched 28-Si samples. The greatly improved spectral resolution due to this enrichment led to the discovery of isotopic fingerprints
Contents:
Introduction and Background History of the Observed Centres in Silicon Experimental Method Results Discussion and Conclusion
Notes:
Ph. D. Simon Fraser University
Includes bibliographical references
Print version record
Other Format:
Print version Steger, Michael. Transition-Metal Defects in Silicon : New Insights from Photoluminescence Studies of Highly Enriched 28-Si
ISBN:
9783642350795
3642350798
OCLC:
828794263
Access Restriction:
Restricted for use by site license

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