Nanoelectronic devices and application / Trupti Ranjan Lenka and Hieu Pham Trung Nguyen.

Format:

Book

Author/Creator:

Lenka, Trupti Ranjan, author.

Nguyen, Hieu Pham Trung, author.

Language:

English

Subjects (All):

Nanoelectronics.

Physical Description:

1 online resource (358 pages)

Edition:

First edition.

Place of Publication:

Singapore : Bentham Science Publishers, [2024]

Summary:

Nanoelectronic Devices and Applications presents reviews on recent advances in nanoelectronic device design and new directions for their practical use. The volume includes 16 edited chapters that cover novel material systems, band engineering, modelling and simulations, fabrication and characterization techniques, and their emerging applications. The discussions presented in this book are based on current understandings on innovations and future trends, and references are provided for advanced scholars. Chapter 1 presents an overview of recent innovations and future prospects in III-nitride semiconductor technologies for RF, power, digital and quantum applications. Chapter 2 reports new trends in GaN-based optical devices for sensing and micro-display applications. Chapter 3 shows current interests in nanophosphors and their utilizations in improving device performance of InGaN nanowire light-emitting diodes (LEDs). Recent studies on the effect of potential profile on the carrier transport in AlGaAs based double quantum well structures and their applications are presented in Chapter 4. The recent progress in high-electron-mobility transistors (HEMTs) is presented through Chapters 5, 6, and 7. A comprehensive review on β-Ga2O3 emphasizing material properties, growth approaches, and its applications for next-generation high-power nanoelectronics; the effect of dielectric layers on the characteristics of AlN/β-Ga2O3 HEMTs are presented in Chapter 8 and 9 respectively. Chapters 10-14 summarize the recent studies in field-effect transistors (FETs) adopting different materials and structures. Chapter 15 presents current research in 2D Tungsten Diselenide (WSe2) with special focus on the material properties, device structures, applications, and challenges. Finally, Chapter 16 presents a systematic review of memristors, and memristive semiconductor

devices. The book is intended as a primary resource for elective subjects in advanced electronics and computer engineering courses at university level. Researchers and industry professionals will also learn about emerging trends and state-of-the-art research in nanoelectronics. Readership Students in advanced engineering courses; researchers and industry professionals.

Contents:

Cover

Title

Copyright

End User License Agreement

Contents

Preface

List of Contributors

Advancements in GaN Technologies: Power, RF, Digital and Quantum Applications

A. Mohanbabu1,*, S. Maheswari2, N. Vinodhkumar3, P. Murugapandiyan4 and R. Saravana Kumar5

INTRODUCTION

Characteristics of GaN:

Motivation for the Present Research Work

Review of GaN-Based Devices

N-Polarity GaN/InN/GaN/In0.9Al0.1N Heterostructure E-Mode HfO2 Insulated MIS-HEMTs

Boron-Doped GaN Gate Cap Layer in a Double Heterostructure (DH) HEMTs for Full-Bridge Inverter Circuit.

Full-Bridge Inverter Circuit

CONCLUSION

REFERENCES

GaN-Based Integrated Optical Devices for Wide-Scenario Sensing Applications

Xiaoshuai An1 and Kwai Hei Li1,*

SENSING MECHANISMS OF GAN-BASED INTEGRATED OPTICAL DEVICES

GAN-BASED INTEGRATED DEVICES FOR PROXIMITY SENSING

Proximity Sensor

Airflow Sensor

Viscosity Sensor

GAN-BASED INTEGRATED DEVICES FOR REFRACTIVE INDEX SENSING

Refractive Index Sensor

Force Sensing

Angle Sensor

CHALLENGES AND FUTURE SCOPES

Phosphor-Converted III-Nitride Nanowire White Light-Emitting Diodes

Hoang-Duy Nguyen1, Mano Bala Sankar Muthu2 and Hieu Pham Trung Nguyen2,*

Luminescence Nanomaterials

Nanowire III-nitride LEDs

Phosphor-converted Nanowire LEDs

CONCLUSION AND PERSPECTIVES

Effect of Non-Square Potential Profile on Electron Transport Lifetime in AlxGa1-xAs-Based Double Quantum Well Structures

Narayan Sahoo1,*, Ajit K. Sahu1, Sangeeta K. Palo1 and Trinath Sahu2

THEORY

Quantum Well Structures

GaAs/AlxGa1-xAs Square Quantum Well

AlxGa1-xAs Non-Square Quantum Wells

Electron Energy Eigenvalues and Eigenfunctions in DQW Structures in the Presence of Fapp.

Multisubband Electron Transport Lifetime

RESULTS AND DISCUSSION

Double Parabolic Quantum Well (DPQW) Structure

Double V-shaped Quantum Well Structure (DVQW)

Double Semi-Parabolic Quantum Well (DSPQW) Structure

Double Semi-V-Shaped Quantum Well (DSVQW) Structure

Double Square Quantum Well (DSQW) Structure:

Comparison of τ in Square and Non-Square DQW Structures

REFERENCE

A Comprehensive Study on High Electron Mobility Transistors

G. Purnachandra Rao1,*, Tanjim Rahman1, E Raghuveera1 and Trupti Ranjan Lenka1

BASIC STRUCTURE OF HEMT

HETEROJUNCTIONS

Equilibrium Band Diagram of Type-I Heterojunction

Electrostatics of a Heterojunction

PRINCIPLE OPERATION OF HEMTS

CLASSIFICATION OF HEMTS

Other III-Nitride HEMTs

CHALLENGES ASSOCIATED WITH HEMTS

Study of DC Characteristics of AlGaN/GaN HEMT and its Compact Models

G. Purnachandra Rao1,*, Tanjim Rahman1 and Trupti Ranjan Lenka1

Motivation toward HEMT

Cut-off (Off State)

Linear Region (Triode Region)

Saturation Region (Active Region)

Heterostructure Design

Two-Dimensional Electron Gas (2DEG)

Material Composition

DC Results Analysis of AlGaN/GaN HEMT

ADVANTAGES OF HEMT OVER MOSFET

PERFORMANCE ANALYSIS USING DIFFERENT HEMT MODELS

EE Model

Parasitic resistances

Saturated Drain Current

Source and Drain Capacitance

Results

ASM Model

Surface Potential

Drain Current

Access Region Resistance

Gate Current

Mvsg Model

Structure

Logic Device Modelling

An Overview of Reliability Issues and Challenges Associated with AlGaN/GaN HEMT

G. Purnachandra Rao1,*, Tanjim Rahman1, E. Raghuveera1 and Trupti Ranjan Lenka1

INTRODUCTION.

RELIABILITY ANALYSIS

Doping with Fe

Doping with Carbon

Next Generation High-Power Material Ga2O3: Its Properties, Applications, and Challenges

M. Nomitha Reddy1 and Deepak Kumar Panda2,*

PHYSICAL PROPERTIES

Polymorphism

β-Ga2O3 Properties

Crystal Structure

Thermal Properties

Optical Properties

GROWTH AND DEPOSITION METHODS

Chemical Synthesis

Thermal Vaporization and Sublimation

Chemical Vapor Deposition

Molecular Beam Epitaxy

APPLICATIONS

Catalysis

Phosphors and Electroluminescent Devices

Gas Sensors

High Power and High Voltage Devices

Schottky diodes

Field Effect Transistors

DEVICE STRUCTURE AND SIMULATION SETUP

Influence on different RF parameters for different fin widths for JL Ga2O3 FINFET

Impact by varying fin width on different linearity parameters for JL Ga2O3 FINFET

Investigation of the Impact of Different Dielectrics on the Characteristics of AlN/β-Ga2O3 HEMT

Meenakshi Chauhan1,*, Kanjalochan Jena1, Raghuvir Tomar1 and Abdul Naim Khan1

DEVICE STRUCTURE AND ITS DIMENSIONS

InAs Raised Buried Oxide SOI-TFET with N-type Si1-xGex Pocket for Low-Power Applications

Ashish Kumar Singh1,* and Satyabrata Jit2

METHODOLOGIES FOR SIMULATING DEVICE STRUCTURE

DC Analysis

RF/Analog Analysis

SiGe Source-Based Epitaxial Layer-Encapsulated TFET and its Application as a Resistive Load Inverter

Radhe Gobinda Debnath1,* and Srimanta Baishya1

COMPUTATIONAL DETAILS: SETUP AND CALIBRATION

OPTIMIZATION OF DESIGN PARAMETERS

Gate-to-source Overlap Length.

Germanium Mole Fraction

Source Doping Concentration

Epitaxial Layer Thickness

Comparison of Architectures

Transient Performance of SiGe Source ETLTFET

Elimination of the Impact of Trap Charges through Heterodielectric BOX in Nanoribbon FET

Lakshmi Nivas Teja1, Rashi Chaudhary1, Shreyas Tiwari1 and Rajesh Saha1,*

DEVICE STRUCTURE AND SIMULATION SET-UP

Effect of BOX Thickness Variation

Effect of Temperature Variation

ACKNOWLEDGMENT

Ge-Channel Nanosheet FinFETs for Nanoscale Mixed Signal Application

Nawal Topno1, Raghunandan Swain1,*, Dinesh Kumar Dash1 and M. Suresh2

NANOSHEET FINFET STRUCTURE

DEVICE SIMULATION SETUP

Recent Trends in FET and HEMT-Based Biosensors for Medical Diagnosis

E. Raghuveera1,*, G. Purnachandra Rao1 and Trupti Ranjan Lenka1

SENSORS IN THE BIOMEDICAL FIELD

Biosensor and its Applications

Detection Techniques

Label-based and Label-free Detection

Properties of a Biosensor

BIOSENSORS - TRENDS AND DEVELOPMENTS

Biosensors using FET

Biosensors using AlGaAs/GaAs HEMT

Biosensors using AlGaN/GaN HEMT

2D Material Tungsten Diselenide (WSe2): Its Properties, Applications, and Challenges

Vydha Pradeep Kumar1 and Deepak Kumar Panda2,*

Single-layer Materials

Transition Metal Dichalcogenides (TMDs):

Optoelectronics

Sensors

Flexible and Wearable Electronics

Photonics and Quantum Technologies

Biomedical Applications

Evaluation of WSe2

Graphene Replacing Silicon in MOSFET

MoS2 Replacing Graphene in Semiconductor Device

Comparison Between Molybdenum Disulfide and Tungsten Diselenide.

Advantages of MoS2 over WSe2

Stability

Scalability

Bandgap

Advantages of WSe2 over MoS2

Carrier Mobility

Spintronics

Structure of WSe2

Properties and Applications of WSe2

Layered Structure

Semiconducting Nature

Strong Photoluminescence

Electrical Conductivity

Mechanical Flexibility

Chemical Stability

Thermal Stability

Quantum Properties

Optical Absorption

Electrical Properties of WSe2

Semiconductor Behaviour

Band Gap Energy

High Carrier Mobility

Anisotropic Conductivity

Field-Effect Transistors (FETs)

Tuneable Carrier Type

Photoconductivity

Thermoelectric Properties

Advantages of WSe2 Compared to other 2D Materials

Direct Band Gap

Thickness-Dependent Properties

Environmental Stability

Strong Light-Matter Interaction

Applications of WSe2

Optoelectronic Devices

Transistors and Integrated Circuits

Flexible Electronics

Quantum Technologies

Energy Storage

Device Design and Simulation Analysis

Challenges of WSe2

Scalable Synthesis

Defects and Impurities

Contact Resistance

Heterogeneity

Integration with Other Materials

Future Scope of WSe2

Electronics and Photonics

Energy Conversion and Storage

Wearable and Flexible Electronics

Memristors as Prospective Devices for Silicon and Post-Silicon Eras: Theory, Applications and Perspectives

Hirakjyoti Choudhury1, Rupam Goswami1,*, Gajendra Kumar2 and Nayan M. Kakoty1

Properties of Memristors

MODELS FOR MEMRISTORS

Linear Ion Drift Model

Non-Linear Ion Drift Model

Simmons Tunnel Barrier Model

TEAM Model

VTEAM Model.

MEMRISTORS AND APPLICATIONS.

Notes:

Description based on publisher supplied metadata and other sources.

Description based on print version record.

Includes bibliographical references.

ISBN:

9789815238242

9815238248

OCLC:

1446134961