Two-dimensional valleytronic materials from principles to device applications Sake Wang, Hongyu Tian

Format:

Book

Author/Creator:

Wang, Sake, author.

Tian, Hongyu, author.

Contributor:

Institute of Physics (Great Britain), publisher.

Language:

English

Subjects (All):

Valleytronics--Materials.

Valleytronics.

Two-dimensional materials.

Physical Description:

1 online resource

Place of Publication:

IOP Publishing 2025

Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) IOP Publishing [2025]

Biography/History:

Dr. Sake Wang earned his PhD in physics at Southeast University, China, in 2016. Since 2021, he has been an Associate Professor at the Jinling Institute of Technology, China. He was a Visiting Scientist at Tohoku University, Japan, from 2019 to 2021. His current interests focus on theoretical studies of spin and valley transport, as well as valley-optoelectronic devices in two-dimensional materials. He has published 73 papers with more than 4,000 citations. Four of his first-authored and corresponding-authored papers are in the top 1% of ESI highly cited papers. In addition, he has served as an Associate Editor of the Journal of Superconductivity and Novel Magnetism (Springer Publishing) since 2020. Dr. Hongyu Tian has been an associate professor at Linyi University, China, since 2023. He completed his PhD in physics at Southeast University, China, in 2013. His research interests mainly focus on the electronic transport properties of two-dimensional systems, including spin and valley-related transport properties, as well as the transport properties of polycrystalline systems. He has published over 50 papers and is PI of the National Natural Science Foundation of China and the Natural Science Foundation of Shandong Province (China)

Summary:

Valleytronics based on 2D materials is a brand-new field which is considered as the heart of next-generation semiconductor technology. Valleytronics focuses on the generation and detection of valley-polarized currents, as well as the design and fabrication of optical devices, which achieve circularly polarized light absorption and electroluminescence. This book aims to give an overview of the recent theoretical and experimental developments achieved in valleytronics based on various 2D materials. After some experimental progress at room temperature in manipulating the valley degree of freedom, valleytronics is considered superior to spintronics in the semiconductor industry. The book provides a useful reference for the growing community of researchers in the field of valleytronics, 2D materials and semiconductors. It will ignite the readers' interest in valleytronics and push the field forward

Contents:

1. Introduction to two-dimensional (2D) materials and valleytronics

1.1. Introduction

1.2. Electronic properties of graphene, definition of 'valley'

1.3. Electronic properties of zigzag graphene nanoribbons

1.4. Spin-orbit coupling in 2D materials

1.5. Molybdenum disulfide (MoS2) and the transition-metal dichalcogenides

1.6. Valley-polarized Landau levels in graphene

1.7. AB-stacked (Bernal phase) bilayer graphene

1.8. Electronic properties of AB-stacked bilayer zGNRs

1.9. Twisted bilayer graphene

1.10. Early theoretical proposal for a valleytronic application

2. Berry phase and valley Hall effect (VHE)

2.1. Topology in solid state physics and basic concepts of the Berry phase

2.2. Pedagogical example : the two-level system

2.3. Electron dynamics in an electric field

2.4. VHE in graphene

2.5. Wavepacket and its orbital moment

2.6. Valley and spin Hall effect in monolayer TMDCs

2.7. Chern number and valley Chern number

2.8. Topological kink states

3. Strain effect on valley polarisation (VP)

3.1. Effect of uniaxial strain

3.2. Local Gaussian bump for valley filtering

3.3. Other proposals corresponding to strain

4. Other valley filter and valve effects

4.1. Trigonal warping effects

4.2. Spin-orbit coupling effects

4.3. Ferrovalley materials with spontaneous VP

4.4. Detection of VP with a superconducting contact

5. Valley-polarized current in polycrystalline systems

5.1. Line defect

5.2. Other polycrystalline graphene

5.3. Line defects of MoS2

6. Valley current in multilayer and twisted systems

6.1. Effect of the perpendicular electric field on AB-stacked bilayer graphene

6.2. VHE in biased bilayer graphene

6.3. Domain wall induced with a voltage kink

6.4. Domain wall induced with a tilt-boundary edge states

7. Valley optoelectronics based on monolayer 2D materials

7.1. Interaction of an electron with an external electromagnetic field

7.2. Jones vector

7.3. Light absorption in hexagonal lattice system

7.4. Optical selection rule in TMDCs

7.5. Exciton Hall effect

7.6. Tuning VP : valley Zeeman effect

7.7. Harness valley degree of freedom in optoelectronic devices

8. Valley optoelectronics based on vdW materials

8.1. Detection of VHE in bilayer TMDCs

8.2. 2D layered materials

8.3. Interlayer excitions (IXs) in type-II van der Walls (vdW) heterostructures

8.4. Valley-polarized exciton

8.5. Moiré IXs

8.6. Enhancement of valley Zeeman effect in vdW heterostructures

Appendix A. The matrix elements of the graphene TB Hamiltonian

Appendix B. Hermite polynomials

Appendix C. The dipole vector of hexagonal systems

Notes:

"Version: 20250501"--Title page verso

Includes bibliographical references

Online resource; title from PDF title page (viewed on June 2, 2025)

Other Format:

Print version Two-dimensional valleytronic materials

ISBN:

9780750355629

9780750355612

OCLC:

1521951826

Access Restriction:

Restricted for use by site license