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Solid-State Power Devices : Circuitry and Characterizations / edited by Michele Riccio, Andrea Irace, and Giovanni Breglio.
- Format:
- Book
- Series:
- Diffusion and defect data Solid state phenomena ; Pt. B, Volume 360
- Solid State Phenomena, 1662-9779 ; Volume 360
- Language:
- English
- Subjects (All):
- Power electronics.
- Silicon carbide.
- Physical Description:
- 1 online resource (203 pages)
- Edition:
- First edition.
- Place of Publication:
- Baech, Switzerland : Trans Tech Publications Ltd, [2024]
- Summary:
- Special topic volume with invited peer-reviewed papers only.
- Contents:
- Intro
- Solid-State Power Devices: Circuitry and Characterizations
- Preface
- Table of Contents
- 3rd Quadrant Surge Current SOA of SiC MOSFETs with Different Voltage Class
- Investigation of the Trapping and Detrapping Behavior by the On-State Resistance at Low Off-State Drain Bias in Schottky p-GaN Gate HEMTs
- Junction-Controlled-Diode-Embedded SiC-MOSFET for Improving Third Quadrant and Turn-On Characteristics
- Effect Evaluation and Modeling of p-Type Contact and p-Well Sheet Resistance of SiC MOSFET with Respect to Switching Characteristics
- Ohmic Contact Resistance in SiC Diodes with Ti and NiSi P+ Contacts
- Influence of Material Properties on Ruggedness Evaluation of Package Architectures for SiC Power Devices
- 1.2 kV SiC MOSFET with Low Specific ON-Resistance and High Immunity to Parasitic Turn-On
- Analysis of Electrothermal Imbalance of Hard-Switched Parallel SiC MOSFETs through Infrared Thermography
- Non-Linear Gate Stack Effect on the Short Circuit Performance of a 1.2-kV SiC MOSFET
- A Geometry-Scalable Physically-Based SPICE Compact Model for SiC MPS Diodes Including the Snapback Mechanism
- SiC GAA MOSFET Concept for High Power Electronics Performance Evaluation through Advanced TCAD Simulations
- High-Speed and High-Temperature Switching Operations of a SiC Power MOSFET Using a SiC CMOS Gate Driver Installed inside a Power Module
- Normally-Off 1200V Silicon Carbide JFET Diode with Low VF
- On the TCAD Modeling of Non-Permanent Gate Current Increase during Short-Circuit Test in SiC MOSFETs
- Study of Parasitic Effects for Accurate Dynamic Characterization of SiC MOSFEFTs: Comparison between Experimental Measurements and Numerical Simulations
- Analytical Modelling of the Quasi-Static Operation of a Monolithically Integrated 4H-SiC Circuit Breaker Device.
- Visualization of P+ JTE Embedded Rings Used for Peripheral Protection of High Voltage Schottky Diodes by the Optical Beam Induced Current (OBIC) Technique
- Design and Characterization of an Optical 4H-SiC Bipolar Junction Transistor
- Temperature-Dependent Evaluation of Commercial 1.2 kV, 40 mΩ 4H-SiC MOSFETs: A Comparative Study between Planar, One-Side Shielded Trench, and Double Trench Gate Structures
- Excellent Avalanche Capability in SiC Power Device with Positively Beveled Mesa Termination
- Frequency Investigation of SiC MOSFETs C-V Curves with Biased Drain
- Experimental Demonstration and Analysis of 3.3kV 4H-SiC Common-Drain Bidirectional Charge-Balanced Power MOSFETs
- Comparison of Si CMOS and SiC CMOS Operational Amplifiers
- Comparative Performance Evaluation of High-Voltage Bidirectional, Conventional and Superjunction Planar DMOSFETs in 4H-SiC
- Comparison of the Surge Current Capabilities of SBD-Embedded and Conventional SiC MOSFETs
- The First Optimisation of a 16 kV 4H-SiC N-Type IGCT
- Influence of Channel Length and Gate Oxide Thickness Variations in 3300 V 4H-SiC VDMOSFET
- Investigation of the Short-Circuit Withstand Time and On-Resistance Trade-Off of 1.2 kV 4H-SiC Power MOSFETs
- Power Cycling Performance of 3.3 kV SiC-MOSFETs and the Impact of the Thermo-Mechanical Stress on Humidity Induced Degradation
- Estimation of Electron Drift Mobility along the c-Axis in 4H-SiC by Using Vertical Schottky Barrier Diodes
- Keyword Index
- Author Index.
- Notes:
- Description based on publisher supplied metadata and other sources.
- Description based on print version record.
- ISBN:
- 9783036416335
- 3036416331
- OCLC:
- 1455131524
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