Processing and Characteristics of Solid-State Structures / edited by Michele Riccio, Andrea Irace, and Giovanni Breglio.

Format:

Book

Contributor:

Riccio, Michele, editor.

Irace, Andrea, editor.

Breglio, Giovanni, editor.

Series:

Diffusion and defect data Solid state phenomena ; Pt. B, Volume 358

Solid State Phenomena, 1662-9779 ; Volume 358

Language:

English

Subjects (All):

Metal oxide semiconductors.

Silicon carbide.

Physical Description:

1 online resource (143 pages)

Edition:

First edition.

Place of Publication:

Baech, Switzerland : Trans Tech Publications Ltd, [2024]

Summary:

Special topic volume with invited peer-reviewed papers only.

Contents:

Intro

Processing and Characteristics of Solid-State Structures

Preface

Table of Contents

Investigation of Potential Impact of Nitridation Process on Single Event Gate Rupture Tolerance in SiC MOS Capacitors

Venus Surface Environmental Chamber Test of SiC JFET-R Multi-Chip Circuit Board

Coupled Non-Destructive Methods, Kelvin Force Probe Microscopy and µ-Raman to Characterize Doping in 4H-SiC Power Devices

Concept and Technology for Full Monolithic MOSFET and JBS Vertical Integration in Multi-Terminal 4H-SiC Power Converters

Comparing 4H-SiC NPN Buffer Layers by Epitaxial Growth and Implantation for Neural Interface Isolation

Modeling the Charging of Gate Oxide under High Electric Field

Complementary Two Dimensional Carrier Profiles of 4H-SiC MOSFETs by Scanning Spreading Resistance Microscopy and Scanning Capacitance Microscopy

Temperature Dependence of 4H-SiC Gate Oxide Breakdown and C-V Properties from Room Temperature to 500 °C

Detection of Very Fast Interface Traps at 4H-SiC/AlN and 4H-SiC/Al2O3 Interfaces

A Voltage Adjustable Diode Integrated SiC Trench MOSFET with Barrier Control Gate

Effects of High Gate Voltage Stress on Threshold Voltage Stability in Planar and Trench SiC Power MOSFETs

Design of Al2O3/LaAlO3/SiO2 Gate Stack on Various Channel Planes for High-Performance 4H-SiC Trench Power MOSFETs

Channel Density Design Guidelines for the Transient Characteristics of SiC Trench Gate MOSFETs

Analysis of On-State and Short-Circuit Capability in 3D Trench SiC MOSFET Designs

Revised Channel Mobility Model for Predictive TCAD Simulations of 4H-SiC MOSFETs

Improvement of Reflectance Spectroscopy for Oxide Layers on 4H-SiC

Doping and Temperature Dependence of Carrier Lifetime in 4H SiC Epitaxial Layers.

Fail-to-Open Short Circuit Failure Mode of SiC Power MOSFETs: 2-D Thermo-Mechanical Modeling

Gate Resistance Integration in SiC MOSFETs: Performance Simulations under Different Implementation Methods

Fast Estimation of the Lateral Fidelity of Ion Implantation in 4H-SiC through Calibration to JFET Transfer Characteristics in TCAD

Keyword Index

Author Index.

Notes:

Description based on publisher supplied metadata and other sources.

Description based on print version record.

ISBN:

9783036416465

3036416463

OCLC:

1455117256