Solid-State Power Devices : Operational Reliability and Parameters' Stability / edited by Michele Riccio, Andrea Irace, and Giovanni Breglio.

Format:

Book

Contributor:

Riccio, Michele, editor.

Irace, Andrea, editor.

Breglio, Giovanni, editor.

Series:

Diffusion and defect data Solid state phenomena ; Pt. B, Volume 361

Solid State Phenomena, 1662-9779 ; Volume 361

Language:

English

Subjects (All):

Power electronics.

Silicon carbide.

Physical Description:

1 online resource (126 pages)

Edition:

First edition.

Place of Publication:

Baech, Switzerland : Trans Tech Publications Ltd, [2024]

Summary:

Special topic volume with invited peer-reviewed papers only.

Contents:

Intro

Solid-State Power Devices: Operational Reliability and Parameters' Stability

Preface

Table of Contents

Total Ionizing Dose (TID) Effects on the 1.2 kV SiC MOSFETs under Proton Irradiation

Reliability of SiC MOSFETs in the High Cycle Fatigue Regime under Fast Power Pulses

Study of the Bias Driven Threshold Voltage Drift of 1.2 kV SiC MOSFETs in Power Cycling and High Temperature Gate Bias Tests

Dependence of the Silicon Carbide Radiation Resistance on the Irradiation Temperature

Anomalous Electrical Behavior of 4H-SiC Schottky Diodes in Presence of Stacking Faults

Early-Stage Reliability Evaluation of Passivation Stack and Termination Designs in SiC MPS Diodes

A Unique Failure Mode of SiC MOSFETs under Accelerated HTRB

Design Optimization and Reliability Evaluation in 1.2 kV SiC Trench MOSFET with Deep P Structure

Experimental Demonstration of Ultra-Fast SiC MOSFET Overload Protection Using Embedded Current and Temperature Sensors

Dynamic Bias-Temperature Instability Testing in SiC MOSFETs

UIS Ruggedness of Parallel 4H-SiC MOSFETs

The Impact of Gamma Irradiation on 4H-SiC Bipolar Junction Inverters under Various Biasing Conditions

Single Event Effects in 3.3 kV 4H-SiC MOSFETs due to MeV Ion Impact

AFM-sMIM Characterization of the Recombination-Enhancing Buffer Layer for Bipolar Degradation Free SiC MOSFETs

Modelling-Augmented Failure Diagnostics in Planar SiC MOS Devices Using TDDB Measurements

High Single-Event Burnout Resistance 1.2 kV 4H-SiC Schottky Barrier Diode

Investigation of Threshold Voltage Instability and Bipolar Degradation in 3.3 kV Conventional Body Diode and Embedded SBD SiC MOSFET

Demonstration of 800°C SiC MOSFETs for Extreme Temperature Applications

Dynamic On-State Resistance and Threshold-Voltage Instability in SiC MOSFETs

Keyword Index

Author Index.

Notes:

Description based on publisher supplied metadata and other sources.

Description based on print version record.

ISBN:

9783036416472

3036416471

OCLC:

1455115850