Extreme-Temperature and Harsh-Environment Electronics : Physics, Technology and Applications / Vinod Kumar Khanna.

Format:

Book

Author/Creator:

Khanna, Vinod Kumar, 1952- author.

Contributor:

Institute of Physics (Great Britain), publisher.

Series:

IOP ebooks. 2023 collection.

IOP Ebooks Series

Language:

English

Subjects (All):

Cryoelectronics.

Electronic apparatus and appliances--Reliability.

Electronic apparatus and appliances.

Physical Description:

1 online resource (various pagings) : illustrations (some color).

Edition:

Second edition.

Place of Publication:

Bristol [England] (Temple Circus, Temple Way, Bristol BS1 6HG, UK) : IOP Publishing, [2023]

System Details:

Mode of access: World Wide Web.

System requirements: Adobe Acrobat Reader, EPUB reader, or Kindle reader.

Biography/History:

Dr. Vinod Kumar Khanna is an independent researcher at Chandigarh, India. He is a former emeritus scientist at the Council of Scientific & Industrial Research (CSIR) and emeritus professor at the Academy of Scientific & Innovative Research (AcSIR), India. He is a retired chief scientist, Head of MEMS & Microsensors Group and Professor of AcSIR at the CSIR-Central Electronics Engineering Research Institute, Pilani, India. He has authored 19 books and six chapters in edited books, published 194 research papers in prestigious research journals and conference proceedings, and has five patents to his credit.

Summary:

Electronic devices and circuits are employed by a range of industries in unfriendly conditions, such as exposure to extreme temperatures, humidity, or radiation. This second edition describes the diverse measures needed to make electronics capable of coping with such situations and exploiting any new phenomena that take place under these specific conditions. The book explains the need for operating electronics beyond conventional limits in applications such as aerospace and automotive engineering. It explores GaAs, SiC, GaN and diamond electronics, superconductive electronics, superconductor-based power delivery; moisture-proof, chemical-corrosion-resistant, radiation hardened and vibration-tolerant electronics; it also covers the prevention of electromagnetic interference, the operation of sensors in hostile conditions, and jamming and hacking mitigation techniques. The book provides up-to-date coverage of the topics for students, academics and industrial researchers as well as professional experts.

Contents:

part I. Environmental hazards and extreme-temperature electronics. Sub-part IA. Environmental hazards. 1. Introduction and overview

1.1. Reasons for moving away from normal practices in electronics

1.2. Organization of the book

1.3. Temperature effects

1.4. Harsh environment effects

1.5. Discussion and conclusions

2. Operating electronics beyond conventional limits

2.1. Life-threatening temperature imbalances on Earth and other planets

2.2. Temperature disproportions for electronics

2.3. High-temperature electronics

2.4. Low-temperature electronics

2.5. The scope of extreme-temperature and harsh-environment electronics

2.6. Discussion and conclusions

part I. Environmental hazards and extreme-temperature electronics. Sub-part IB. Extreme-temperature electronics. 3. Temperature effects on semiconductors

3.1. Introduction

3.2. The energy bandgap

3.3. Intrinsic carrier concentration

3.4. Carrier saturation velocity

3.5. Electrical conductivity of semiconductors

3.6. Free carrier concentration in semiconductors

3.7. Incomplete ionization and carrier freeze-out

3.8. Different ionization regimes

3.9. Mobilities of charge carriers in semiconductors

3.10. Equations for mobility variation with temperature

3.11. Mobility in MOSFET inversion layers at low temperatures

3.12. Carrier lifetime

3.13. Wider bandgap semiconductors than silicon

3.14. Discussion and conclusions

4. Temperature dependence of the electrical characteristics of silicon bipolar devices and circuits

4.1. Properties of silicon

4.2. Intrinsic temperature of silicon

4.3. Recapitulating single-crystal silicon wafer technology

4.4. Examining temperature effects on bipolar devices

4.5. Bipolar analog circuits in the 25 °C-300 °C range

4.6. Bipolar digital circuits in the 25 °C-340 °C range

4.7. Discussion and conclusions

5. Temperature dependence of electrical characteristics of silicon MOS devices and circuits

5.1. Introduction

5.2. Threshold voltage of an n-channel enhancement-mode MOSFET

5.3. On-resistance (RDS(ON)) of a double-diffused vertical MOSFET

5.4. Transconductance (gm) of a MOSFET

5.5. BVDSS and IDSS of a MOSFET

5.6. Zero temperature coefficient biasing point of MOSFET

5.7. Dynamic response of a MOSFET

5.8. MOS analog circuits in the 25 °C to 300 °C range

5.9. Digital CMOS circuits in -196 °C to 270 °C range

5.10. Discussion and conclusions

6. The influence of temperature on the performance of silicon-germanium heterojunction bipolar transistors

6.1. Introduction

6.2. HBT fabrication

6.3. Current gain and forward transit time of Si/Si1-xGex HBT

6.4. Comparison between Si BJT and Si/SiGe HBT

6.5. Discussion and conclusions

7. The temperature-sustaining capability of gallium arsenide electronics

7.1. Introduction

7.2. The intrinsic temperature of GaAs

7.3. Growth of single-crystal gallium arsenide

7.4. Doping of GaAs

7.5. Ohmic contacts to GaAs

7.6. Schottky contacts to GaAs

7.7. Commercial GaAs device evaluation in the 25 °C-400 °C temperature range

7.8. .Structural innovations for restricting the leakage current of GaAs MESFET up to 300 °C

7.9. Won et al threshold voltage model for a GaAs MESFET

7.10. The high-temperature electronic technique for enhancing the performance of MESFETs up to 300 °C

7.11. The operation of GaAs complementary heterojunction FETs from 25 °C to 500 °C

7.12. GaAs bipolar transistor operation up to 400 °C

7.13. A GaAs-based HBT for applications up to 350 °C

7.14. AlxGaAs1-x/GaAs HBT

7.15. GaAs x-ray and beta particle detectors

7.16. Discussion and conclusions

8. Silicon carbide electronics for hot environments

8.1. Impact of silicon carbide devices on power electronics and its superiority over silicon

8.2. Intrinsic temperature of silicon carbide

8.3. Silicon carbide single-crystal growth

8.4. Doping of silicon carbide

8.5. Surface oxidation of silicon dioxide

8.6. Schottky and ohmic contacts to silicon carbide

8.7. SiC p-n diodes

8.8. SiC Schottky barrier diodes

8.9. SiC JFETs

8.10. SiC bipolar junction transistors

8.11. SiC MOSFETs

8.12. SiC sensors

8.13. Discussion and conclusions

9. Gallium nitride electronics for very hot environments

9.1. Introduction

9.2. Intrinsic temperature of gallium nitride

9.3. Growth of the GaN epitaxial layer

9.4. Doping of GaN

9.5. Ohmic contacts to GaN

9.6. Schottky contacts to GaN

9.7. GaN MESFET model with hyperbolic tangent function

9.8. AlGaN/GaN HEMTs

9.9. InAlN/GaN HEMTs

9.10. GaN sensors

9.11. Discussion and conclusions

10. Diamond electronics for ultra-hot environments

10.1. Introduction

10.2. Intrinsic temperature of diamond

10.3. Synthesis of diamond

10.4. Doping of diamond

10.5. A diamond p-n junction diode

10.6. Diamond Schottky diode

10.7. Diamond bipolar junction transistor operating at < 200 °C

10.8. Diamond metal-semiconductor FET

10.9. Diamond JFET

10.10. Diamond MISFET

10.11. Diamond radiation detectors

10.12. Diamond quantum sensors

10.13. Discussion and conclusions

11. High-temperature passive components, interconnections and packaging

11.1. Introduction

11.2. High-temperature resistors

11.3. High-temperature capacitors

11.4. High-temperature magnetic cores and inductors

11.5. High-temperature metallization

11.6. High-temperature packaging

11.7. Discussion and conclusions

12. Superconductive electronics for ultra-cool environments

12.1. Introduction

12.2. Superconductivity basics

12.3. Josephson junction

12.4. Inverse AC Josephson effect : Shapiro steps

12.5. Superconducting quantum interference devices

12.6. Rapid single flux quantum logic

12.7. Discussion and conclusions

13. Superconductor-based microwave circuits operating at liquid-nitrogen temperatures

13.1 Introduction

13.2. Substrates for microwave circuits

13.3. HTS thin-film materials

13.4. Fabrication processes for HTS microwave circuits

13.5. Design and tuning approaches for HTS filters

13.6. Cryogenic packaging

13.7. HTS bandpass filters for mobile telecommunications

13.8. HTS JJ-based frequency down-converter

13.9. Discussion and conclusions

14. High-temperature superconductor-based power delivery

14.1. Introduction

14.2. Conventional electrical power transmission

14.3. HTS wires

14.4. HTS cable designs

14.5. HTS fault current limiters

14.6. HTS transformers

14.7. Discussion and conclusions

part II. Harsh-environment electronics. Sub-part IIA. General considerations. 15. Humidity and contamination effects on electronics

15.1. Introduction

15.2. Absolute and relative humidity

15.3. Relation between humidity, contamination and corrosion

15.4. Metals and alloys used in electronics

15.5. Humidity-triggered corrosion mechanisms

15.6. Discussion and conclusions

16. Moisture and waterproof electronics

16.1. Introduction

16.2. Corrosion prevention by design

16.3. Parylene coatings

16.4. Superhydrophobic coatings

16.5. Volatile corrosion inhibitor coatings

16.6. Silicones

16.7. Discussion and conclusions

17. Preventing chemical corrosion in electronics

17.1. Introduction

17.2. Sulfidic and oxidation corrosion from environmental gases

17.3. Electrolytic ion migration and galvanic coupling

17.4. Internal corrosion of integrated and printed circuit board circuits

17.5. Fretting corrosion

17.6. Tin whisker growth

17.7. Minimizing corrosion risks

17.8. Further protection methods

17.9. Hermetic packaging

17.10. Hermetic glass passivation of discrete high-voltage diodes, transistors and thyristors

17.11. Discussion and conclusions

18. Radiation effects on electronics

18.1. Introduction

18.2. Sources of radiation

18.4. Total dose effects

18.5. Single-event effects

18.6. Discussion and conclusions

19. Radiation-hardened electronics

19.1. The meaning of 'radiation hardening'

19.2. Radiation hardening by process (RHBP)

19.3. Radiation hardening by design

19.4. Discussion and conclusions

20. Vibration-tolerant electronics

20.1. Vibration is omnipresent

20.2. Random and sinusoidal vibrations

20.3. Countering vibration effects

20.4. Passive and active vibration isolators

20.5. Theory of passive vibration isolation

20.6. Mechanical spring vibration isolators

20.7. Air-spring vibration isolators

20.8. Wire-rope isolators

20.9. Elastomeric isolators

20.10. Negative stiffness isolators

20.11. Active vibration isolators

20.12. Discussion and conclusions

part II. Harsh-environment electronics. Sub-part IIB. Application-specific robust electronics techniques

21. Making electronics compatible with electromagnetic interference environments

21.1. Electromagnetic interference

21.2. Electromagnetic compatibility

21.3. Classification of EMI

21.4. Effects of EMI

21.5. Single-ended and differential transmission of signals

21.6. Differential- and common-mode voltages

21.7. Differential-mode interference

21.8. Common-mode interference

21.9. Twisted pair cable for common-mode EMI noise rejection

21.10. Common-mode interference from common impedance coupling

21.11. Combined EMI noise

21.12. Filters for EMI noise suppression

21.13. Grounding

21.14. Grounding approaches

21.15. EMI shielding

21.16. Grounding of shielded cables

21.17. Discussion and conclusions

22. Developing sensor capabilities for aggressive environments

22.1. Disorganized scenario in a harsh environment, and denial of accessibility to the sensor

22.2. High-temperature sensors

22.3. Need of tightly monitoring energy systems aggravates burden on sensors

22.4. Accelerometers

22.5. Flow sensors

22.6. Pressure sensors

22.7. Temperature sensors

22.8. Humidity sensors

22.9. Gas sensors

22.10. Discussions and conclusions

23. Adapting medical implant electronics to human biological environments

23.1. Environment inside the human body

23.2. Essential properties of packaging materials for reliable functioning of implanted medical electronic devices

23.3. Studying biological response vis-à-vis material properties

23.4. Foreign body reaction to implanted biomaterials

23.5. Biomaterials for implants

23.6. Metallic biomaterials

23.7. Ceramic biomaterials

23.8. Polymeric biomaterials

23.9. Composite biomaterials

23.10. Implantable microelectrode arrays for neuroprosthetics

23.11. Optrode array with integrated LEDs

23.12. Operation of an implanted electronics device enclosed in a soft polymer covering

23.13. Anti-foreign body reaction (FBR) techniques for domestication/mitigation of FBR to implants

23.14. Sensors working in biological environments

23.15. Discussion and conclusions

24. Meeting the challenges faced by electronics in unfavorable space environments

24.1. The challenge of vibrations and shocks

24.2. The challenge of temperature excursions beyond safe limits

24.3. The challenge of electrical charging of spacecraft

24.4. The challenge of tin whisker growth

24.5. The challenge of erosion of spacecraft materials by atomic oxygen

24.6. The challenge of radiation showers

24.7. The challenge of outgassing in vacuum environment of space

24.8. Discussion and conclusions

25. Electronics jamming counteraction and cybersecurity assurance in adversary environments

25.1. A jamming attack

25.2. Types of jamming and jammers

25.3. Detection of jamming attacks

25.4. Mapping out jammed area and planning the defense strategy against jamming

25.5. Approaches to overcome jamming

25.6. Retreating methods

25.7. Competition method : regulation of transmitted power and error correcting code

25.8. Jamming-resistant spread-spectrum communication systems

25.9. Ethical hacking

25.10. Malware (malicious software)

25.11. Hacking threats and attacks

25.12. Defences against hacking

25.13. Discussion and conclusions.

Notes:

"Version: 20230701"--Title page verso.

Includes bibliographical references.

Title from PDF title page (viewed on August 1, 2023).

Description based on print version record.

ISBN:

9780750350723

0750350725

9780750350716

0750350717

OCLC:

1391997188