Ferroelectric Random Access Memories [electronic resource] : Fundamentals and Applications / edited by Hiroshi Ishiwara, Masanori Okuyama, Yoshihiro Arimoto.

Format:

Book

Contributor:

Ishiwara, Hiroshi., Editor.

Okuyama, Masanori., Editor.

Arimoto, Yoshihiro., Editor.

Series:

Topics in Applied Physics, 0303-4216 ; 93

Language:

English

Subjects (All):

Metals.

Optical materials.

Electronics--Materials.

Electronics.

Condensed matter.

Solid state physics.

Spectrum analysis.

Microscopy.

Metallic Materials.

Optical and Electronic Materials.

Condensed Matter Physics.

Solid State Physics.

Spectroscopy and Microscopy.

Local Subjects:

Metallic Materials.

Optical and Electronic Materials.

Condensed Matter Physics.

Solid State Physics.

Spectroscopy and Microscopy.

Physical Description:

1 online resource (XIII, 291 p.)

Edition:

1st ed. 2004.

Place of Publication:

Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2004.

Language Note:

English

Summary:

In fabrication of FeRAMs, various academic and technological backgrounds are necessary, which include ferroelectric materials, thin film formation, device physics, circuit design, and so on.This book covers from fundamentals to applications of ferroelectric random access memories (FeRAMs). The book consists of 5 parts; (1) ferroelectric thin films, (2) deposition and characterization methods, (3) fabrication process and circuit design, (4) advanced-type memories, and (5) applications and future prospects, and each part is further devided in several chapters. Because of the wide range of the discussed topics, each chapter in this book was written by one of the best authors knowing the specific topic very well. Thus, this is a good introduction book of FeRAM for graduate students and new comers to this field, as well as it helps specialists to understand FeRAMs more deeply.

Contents:

Part I Ferroelectric Thin Films: Overview

Novel Si-substituted Ferroelectric Films

Static and Dynamic Properties of Domains

Nanoscale Phenomena in Ferroelectric Thin Films

Part II Deposition and Characterization Methods: Sputtering Techniques

Chemical Approach Using Tailored Liquid Sources to Bi-based Layer-structured Perovskite Thin Films

Recent Development of Ferroelectric Thin Films by MOCVD

Materials Integration Strategies

Characterization by Scanning Nonlinear Dielectric Microscopy

Part III Fabrication Process and Circuit Design: Current Status of FeRAMs

Operation Principle and Circuit Design Issues

High Density Integration

Testing and Reliability

Part IV Advanced-Type Memories: Chain FeRAMs

Capacitor-on-Metal/Via-stacked-Plug (CMVP) Memory Cell and Application to a Non-volatile SRAM

FET-type FeRAMs

Part V Applications and Future Prospects: Application to Future Information Technology World

Subject Index.

Notes:

Bibliographic Level Mode of Issuance: Monograph

ISBN:

3-540-45163-3