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CVD solutions for new directions in SiC and GaN epitaxy / Xun Li.
- Format:
- Book
- Author/Creator:
- Li, Xun, author.
- Series:
- Linköping studies in science and technology. Dissertations ; Number 1654.
- Linköping Studies in Science and Technology. Dissertations, 0345-7524 ; Number 1654
- Language:
- English
- Subjects (All):
- Wide gap semiconductors--Materials.
- Wide gap semiconductors.
- Gallium nitride.
- Optoelectronic devices.
- Physical Description:
- 1 online resource (55 pages).
- Edition:
- 1st ed.
- Place of Publication:
- Linköping, Sweden : Semiconductor Materials Division Department of Physics, Chemistry and Biology (IFM), Linköping University, 2015.
- Contents:
- Intro
- Table of Contents
- Abstract
- Populärvetenskaplig sammanfattning
- Preface
- List of papers included in the thesis
- List of publications not included in the thesis
- Acknowledgements
- 1 Silicon Carbide
- 2 Gallium Nitride
- 3 Chemical Vapor Deposition
- 4 Characterization
- 5 Summary of papers
- 6 My contribution to the papers
- 7 References.
- Notes:
- Includes bibliographical references.
- Description based on online resource; title from PDF title page (ebrary, viewed June 10, 2015).
- ISBN:
- 91-7519-084-2
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