Doping Effects on the Structural and Optical Properties of GaN.

Format:

Book

Author/Creator:

Khromov, Sergey.

Series:

Linköping Studies in Science and Technology. Dissertations

Linköping Studies in Science and Technology. Dissertations ; v.1554

Language:

English

Subjects (All):

Doped semiconductors.

Gallium nitride.

Physical Description:

1 online resource (71 pages)

Edition:

1st ed.

Other Title:

Linköping Studies in Science and Technology. Dissertations

Place of Publication:

Linköping : Linköping University Electronic Press, 2013.

Summary:

This dissertation by Sergey Khromov examines the effects of doping on the structural and optical properties of gallium nitride (GaN), a material crucial for improving the efficiency of light-emitting diodes (LEDs) and power electronic devices. The research involves comprehensive studies using various microscopy and spectroscopy techniques to understand how doping with impurities such as magnesium, silicon, oxygen, and carbon affects GaN's properties. The findings suggest that doping can significantly influence defect formation and luminescence characteristics, which are vital for enhancing the performance of GaN-based devices. The work aims to reduce defect density and improve structural quality in GaN layers, contributing to the advancement of energy-efficient LED technology. Generated by AI.

Contents:

Intro

ABSTRACT

POPULÄRVETENSKAPLIG SAMMANFATTNING

PREFACE

INCLUDED PAPERS

RELATED BUT NOT INCLUDED PAPER

ACKNOWLEDGEMENTS

Table of Contents

1. Introduction

2. Growth of GaN

3. Properties of GaN

4. Optical Transitions in GaN

5. Extended Defects in GaN

6. Characterization Techniques

7. Summary of the Papers

Bibliography.

Notes:

Description based on publisher supplied metadata and other sources.

Part of the metadata in this record was created by AI, based on the text of the resource.

ISBN:

9789175194837

917519483X

OCLC:

927227644