Ultra clean processing of semiconductor surfaces XIII : selected, peer reviewed papers from the 13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS) September 12-14, 2016, Knokke, Belgium / edited by Paul W. Mertens, Marc Meuris and Marc Heyns.

Format:

Book

Contributor:

Mertens, Paul W., editor.

Meuris, Marc, editor.

Heyns, Marc, editor.

Series:

Diffusion and defect data. Pt. B, Solid state phenomena ; Volume 255.

Solid State Phenomena, 1662-9779 ; Volume 255

Language:

English

Subjects (All):

Semiconductors--Surfaces--Congresses.

Semiconductors.

Semiconductors--Congresses.

Physical Description:

1 online resource (395 pages) : illustrations.

Edition:

1st ed.

Place of Publication:

Pfaffikon, Switzerland : Trans Tech Publications, 2016.

Summary:

Selected, peer reviewed papers from the 13th International Symposium on Ultra Clean Processing of Semiconductor Surfaces (UCPSS), September 12-14, 2016, Knokke, Belgium.

Contents:

Intro

Ultra Clean Processing of Semiconductor Surfaces XIII

Preface, Committees, Sponsor

Table of Contents

Chapter 1: FEOL: Surface Chemistry Group IV Semiconductors

Wet Selective SiGe Etch to Enable Ge Nanowire Formation

Silicon Surface Passivation in HF Solutions for Improved Gate Oxide Reliability

Surface Preparation Quality before Epitaxy our Paper's

Study of Oxygen Concentration in TMAH Solution for Improvement of Sigma-Shaped Wet Etching Process

The Effect of Rinsing a Germanium Surface after Wet Chemical Treatment

Effect of Dilute Hydrogen Peroxide in Ultrapure Water on SiGe Epitaxial Process

Surface Passivation of New Channel Materials Utilizing Hydrogen Peroxide and Hydrazine Gas

Tris(Trimethylsilyl)Germane (Me3Si)3GeH: A Molecular Model for Sulfur Passivation of Ge(111) Surfaces

Applications for Surface Engineering Using Atomic Layer Etching - Invited Paper

Chapter 2: FEOL: Surface Chemistry Groups III-V Compound Semiconductors

Towards Atomic-Layer-Scale Processing of High Mobility Channel Materials in Acidic Solutions for N5 and N7 Technology Nodes

Comparison of the Chemical Passivation of GaAs, In0.53Ga0.47As, and InSb with 1-Eicosanethiol

Digital Etching of GaAs Materials: Comparison of Oxidation Treatments

Chapter 3: FEOL: Etching

Thin Layer Etching of Silicon Nitride: Comparison of Downstream Plasma, Liquid HF and Gaseous HF Processes for Selective Removal after Light Ion Implantation

Selective Etching of Silicon Oxide versus Nitride with Low Oxide Etching Rate

Metrology for High Selective Silicon Nitride Etch

Study on the Etching Selectivity of Oxide Films in Dry Cleaning Process with NF3 and H2O

Titanium Nitride Hard Mask Removal with Selectivity to Tungsten in FEOL

Analysis of Si Wet Etching Effect on Wafer Edge.

Chapter 4: FEOL: Photoresist Removal, General Cleaning

Middle of Line (MoL) Cleaning Challenges in Sub-20nm Node Device Manufacturing

Characterization and Development of High Dose Implanted Resist Stripping Processes

Chemical Infiltration through Deep UV Photoresist

Efficient Photoresist Residue Removal with 172nm Excimer Radiation

Chapter 5: Processes of Wetting and Drying

Deep Trench Isolation and through Silicon via Wetting Characterization by High-Frequency Acoustic Reflectometry

Pattern Collapse of High-Aspect-Ratio Silicon Nanostructures - A Parametric Study

Influence of CO2 Gas Atmosphere on the Liquid Filling of Superhydrophobic Nanostructures

Some Critical Issues in Pattern Collapse Prevention and Repair

Watermark-Free and Efficient Spray Clean on Hydrophobic Surface with Single-Wafer Technology

Extended-Nanofluidic Devices and the Unique Liquid Properties - Invited Paper

Chapter 6: Mechanical Fluid Effects, Nanoparticles

Measurement of the Frictional Force between PVA Roller Brushes and Semiconductor Wafers with Various Films Immersed in Chemicals

Removal of Bull's Eye Signature by Optimizing Wet Cleans Recipe

Toward CO2 Beam Cleaning of 20-nm Particles in Atmospheric Pressure

Liquid Cell Platform to Directly Visualize Bottom-Up Assembly and Top-Down Etch Processes inside TEM

A Study on the Electrostatic Discharge (ESD) Defect in SOH Mask Pattern Cleaning

Post-CMP Cleaners for Tungsten at Advanced Nodes

Advanced Cryogenic Aerosol Cleaning: Small Particle Removal and Damage-Free Performance

Developments for Physical Cleaning Sample with High Adhesion Force Particles and Direct Measurement of its Removal Force

Characterization of Cavitation in a Single Wafer or Photomask Cleaning Tool

Chapter 7: Interconnect Cleaning.

Molecular Simulation Contribution to Porous Low-k Pore Size Determination after Damage by Etch and Wet Clean Processes - Invited Paper

Rapid Recovery Process of Plasma Damaged Porous Low-k Dielectrics by Wet Surface Modifying Treatment

Characterization of Etch Residues Generated on Damascene Structures

Evaluation of Post Etch Residue Cleaning Solutions for the Removal of TiN Hardmask after Dry Etch of Low-k Dielectric Materials on 45 nm Pitch Interconnects

Optimization of Cu/Low-k Dual Damascene Post-Etch Residue and TiN Hard Mask Removal

TiN Metal Hardmask Etch Residues Removal with AlN Etch

High Throughput Wet Etch Solution for BEOL TiN Removal

Impact of Dissolved Oxygen in Dilute HF Solution on Material Etch

The Effect of Inhibitors on Co Corrosion in Alkaline Post Cu-CMP Cleaning Solutions

Oxygen Control for Wet Clean Process on Single Wafer Platform

Study of TiW Conditioning through Different Wet and Dry Treatments to Promote Ni Electroless Growth

Post CMP Wet Cleaning Influence on Cu Hillocks

Minimizing Wafer Surface Charging for Single-Wafer Wet Cleaning for 10 nm and beyond

Chapter 8: 3D Integrated Structures

Silica Formation during Etching of Silicon Nitride in Phosphoric Acid

Low Undercut Ti Etch Chemistry for Cu Bump Pillar under Bump Metallization Wet Etch Process

Chapter 9: Metrology, Specification and Control of Contamination

Electrical Characterization of As-Processed Semiconductor Surfaces - Invited Paper

Atomic Resolution Quality Control for Fin Oxide Recess by Atomic Resolution Profiler

Specification of Trace Metal Contamination for Image Sensors

Metal Removal Efficiency in High Aspect Ratio Structures

Quantitative Analysis of Trace Metallic Contamination on III-V Compound Semiconductor Surfaces.

A Mathematical Model Forecasting HF Adsorption onto Cu-Coated Wafers as a Function of the Airborne Concentration and Moisture

Chapter 10: Photovoltaics

Oxidation of Si Surfaces: Effect of Ambient Air and Water Treatments on Surface Charge and Interface State Density

Surface Optimization of Random Pyramid Textured Silicon Substrates for Improving Heterojunction Solar Cells

'Just-Clean-Enough': Optimization of Wet Chemical Cleaning Processes for Crystalline Silicon Solar Cells

Progress in Cleaning and Wet Processing for Kesterite Thin Film Solar Cells

Chapter 11: Non-Wafer Cleaning, Mask Cleaning

Optimization of EUV Reticle Cleaning by Evaluation of Chemistries on Wafer-Based Mimic Test Structures

Ultra-Trace Sulfate Ion Removal on Photomasks for Haze Reduction

172 nm Excimer Radiation as a Technology Accelerator for Bio-Electronic Applications

Chapter 12: Contamination Сontrol of Wafer Ambient

Electrolyzed Water for Efficient Metal Removal

Contamination Control for Wafer Container Used within 300 mm Manufacturing for Power Microelectronics

Inline FOUP Cleaner - The New Type FOUP Cleaner for the Next Generation

Keyword Index

Author Index.

Notes:

Includes bibliographical references and index.

Description based on online resource; title from PDF title page (ebrary, viewed June 21, 2017).

Description based on publisher supplied metadata and other sources.

ISBN:

3-0357-3084-9

OCLC:

988871957