Physics at surfaces and interfaces : proceedings of the international conference, Puri, India, 4-8 March 2002 / edited by B.N. Dev.

Format:

Book

Conference/Event

Author/Creator:

International Conference on Physics at Surfaces and Interfaces, Corporate Author.

Contributor:

Dev, B. N.

Institute of Physics (Bhubaneswar, India)

Conference Name:

International Conference on Physics at Surfaces and Interfaces (2002 : Puri, India)

International Conference on Physics at Surfaces and Interfaces

Language:

English

Subjects (All):

Interfaces (Physical sciences)--Congresses.

Interfaces (Physical sciences).

Surfaces (Physics)--Congresses.

Surfaces (Physics).

Physical Description:

1 online resource (199 p.)

Place of Publication:

River Edge, N.J. : World Scientific, 2003.

Language Note:

English

Summary:

This book contains articles in several areas involving a dominant role of surfaces and interfaces. It is divided into four sections. The first section deals with theoretical and experimental aspects of the structure and morphology of clean surfaces and adsorbed layers on surfaces. The next section concerns growth on surfaces leading to semiconductor devices with quantum well, quantum wire and quantum dot structures; also deals with spin transport in 2DEG. Section 3 is on layered synthetic microstructures (LSMs). Analysis of interface roughness and layer composition of LSMs by X-ray techniques,

Contents:

Preface; Introduction; Contents; CLEAN SURFACES AND ADSORBED LAYERS: STRUCTURE AND MORPHOLOGY; Honeycombs, Triangles and Bright Stars: The Adatom-Induced Reconstruction of Pt(III) Shobhana Narasimhan and Raghani Pushpa; 1 Introduction; 1.1 Surface Reconstructions; 1.2 Experimental data on Pt(111); 2 Calculations; 2.1 Frenkel-Kontorova Model; 2.2 Details of Ab Initio Calculations; 2.3 Determination of Surface-Surface Interactions; 2.4 Determination of Surface-Bulk Interactions; 2.5 Determination of the Chemical Potential; 2.6 Energy Minimization; 2.7 Domain Patterns; 3 Summary; Acknowledgments

ReferencesMetallic Surfaces Under Elevated Gas Pressure Studied In Situ by Scanning Tunneling Microscopy: O2,H2/Au(III); CO/Au(l F. J. C. S. Aires, C. Deranlot, Y. Jugnet, L. Piccolo and J.-C. Bertolini; 1. Introduction; 2. Experimental methods; 3. Results and discussion; 3.1 STM performances under UHV and high pressure conditions : O2, H2/Au(111); 3.2 CO/Au(110); Conclusion; References; X-Ray Structural Analysis of Semiconductor-Electrolyte Interfaces 5. Warren, T.-L. Lee, J. Zegenhagen, A. Reitzle, D. M. Kolb, J. Ziegler, F. Maroun, P. Allongue, A. Kazimirov and G. Scherb; 1. Introduction

2. Experimental2.1. Characterization of samples; 2.2. Description of beamlines; 2.3. Electrochemical cells for in-situ x-ray studies; 3. Results and Discussion; 3.1. GaAs; 3.2. Hydrogen terminated Si(111); 4. Summary and Conclusions; Acknowledgments; References; Aspects of Heteroepitaxial Growth S. M. Shivaprasad; 1. Introduction; 2. Experimental; 3. Results and Discussions; 3.1. Ni/Ru(0001); 3.2. Sb/Si(111); 3.3 Pt/W(111); 4. Conclusions; Acknowledgements; References; QUANTUM WELL, WIRE AND DOT: STRUCTURE AND TRANSPORT

Growth and Characterization of P-HEMT Structures Grown by Molecular Beam Epitaxy R. Muralidharan, T. Srinivasan, U. Tiwari, S. K. Mehta, R. K. Jain, D. V. Sridhara Rao, K. Muraleedharan and R. Balamuralikrishnan1 Introduction; 2 Experimental; 2.1 Buffer layer Growth; 2.2 Pseudomorphlc InGaAs layer; 2.3 Growth of 'AlGaAs' spacer and 'donor' layer; 3 Results and Discussion; 4 Conclusions; Acknowledgement; References; Spin Transport in a Two-Dimensional Electron Gas T. P. Pareek and P. Bruno; 1. Introduction; 1.1. Tight binding Hamiltonian; 1.2. Results and discussion

2. Symmetry and Anisotropy of conductance of a Ferromagnetic-2DEG interface3. Conclusion; Acknowledgments; References; Stepped Silicon Templates for Quantum Wire Structures I. K. Robinson, P. A, Bennett and F. J. Himpsel; References; Scanning Tunneling Microscopy Study of Epitaxial Growth of Si and Ge on Silicon During Growth Bert Voigtldnder; 1. Introduction; 2. Influence of the (7x7) reconstruction in Si/Si(111) epitaxy; 3. Kinetically self-limiting growth of Ge islands on Si(00l); 4. Summary; References

Growth of Self-Assembled Epitaxial Germanium Nanoislands on Silicon Surfaces by Molecular Beam Epitaxy D. K. Goswami, B. Satpati, P. V. Satyam and B. N. Dev

Notes:

Organized by the Institute of Physics, Bhubaneswar, India.

Includes bibliographical references and index.

ISBN:

1-281-90597-6

9786611905972

981-270-422-1