Carbon nanotube graphene device physics / H.-S. Philip Wong, Deji Akinwande.

Format:

Book

Author/Creator:

Wong, Hon-Sum Philip, 1959- author.

Akinwande, Deji, author.

Language:

English

Subjects (All):

Nanotubes.

Graphene.

Optoelectronics--Materials.

Optoelectronics.

Semiconductors--Materials.

Semiconductors.

Physical Description:

1 online resource (x, 251 pages) : digital, PDF file(s).

Other Title:

Carbon Nanotube & Graphene Device Physics

Place of Publication:

Cambridge : Cambridge University Press, 2011.

Language Note:

English

Summary:

Explaining the properties and performance of practical nanotube devices and related applications, this is the first introductory textbook on the subject. All the fundamental concepts are introduced, so that readers without an advanced scientific background can follow all the major ideas and results. Additional topics covered include nanotube transistors and interconnects, and the basic physics of graphene. Problem sets at the end of every chapter allow readers to test their knowledge of the material covered and gain a greater understanding of the analytical skill sets developed in the text. This is an ideal textbook for senior undergraduate and graduate students taking courses in semiconductor device physics and nanoelectronics. It is also a perfect self-study guide for professional device engineers and researchers.

Contents:

Cover; Carbon Nanotube and Graphene Device Physics; Title; Copyright; Contents; Preface; 1 Overview of carbon nanotubes; 1.1 Introduction; 1.2 An abbreviated zigzag history of CNTs; 1.3 Synthesis of CNTs; 1.4 Characterization techniques; 1.5 What about non-CNTs?; 2 Electrons in solids: a basic introduction; 2.1 Introduction; 2.2 Quantum mechanics of electrons in solids; 2.3 An electron in empty space; 2.4 An electron in a finite empty solid; 2.5 An electron in a periodic solid: Kronig-Penney model; 2.6 Important insights from the Kronig-Penney model; 2.7 Basic crystal structure of solids

2.8 The Bravais lattice2.9 The reciprocal lattice; 2.10 Summary; 2.11 Problem set; 3 Graphene; 3.1 Introduction; 3.2 The direct lattice; 3.3 The reciprocal lattice; 3.4 Electronic band structure; 3.5 Tight-binding energy dispersion; 3.6 Linear energy dispersion and carrier density; 3.7 Graphene nanoribbons; 3.8 Summary; 3.9 Problem set; 4 Carbon nanotubes; 4.1 Introduction; 4.2 Chirality: a concept to describe nanotubes; 4.3 The CNT lattice; 4.4 CNT Brillouin zone; 4.5 General observations from the Brillouin zone; 4.6 Tight-binding dispersion of chiral nanotubes

4.7 Band structure of armchair nanotubes4.8 Band structure of zigzag nanotubes and the derivation of the bandgap; 4.9 Limitations of the tight-binding formalism; 4.10 Summary; 4.11 Problem set; 5 Carbon nanotube equilibrium properties; 5.1 Introduction; 5.2 Free-electron density of states in one dimension; 5.3 Density of states of zigzag nanotubes; 5.4 Density of states of armchair nanotubes; 5.5 Density of states of chiral nanotubes and universal density of states for semiconducting CNTs; 5.6 Group velocity; 5.7 Effective mass; 5.8 Carrier density; 5.9 Summary; 5.10 Problem set

6 Ideal quantum electrical properties6.1 Introduction; 6.2 Quantum conductance; 6.3 Quantum conductance of multi-wall CNTs; 6.4 Quantum capacitance; 6.5 Quantum capacitance of graphene; 6.6 Quantum capacitance of metallic CNTs; 6.7 Quantum capacitance of semiconducting CNTs; 6.8 Experimental validation of the quantum capacitance for CNTs; 6.9 Kinetic inductance of metallic CNTs; 6.10 From Planck to quantum conductance: an energy-based derivation of conductance; 6.11 Summary; 6.12 Problem set; 7 Carbon nanotube interconnects; 7.1 Introduction; 7.2 Electron scattering and lattice vibrations

7.3 Electron mean free path7.4 Single-wall CNT low-field resistance model; 7.5 Single-wall CNT high-field resistance model and current density; 7.6 Multi-wall CNT resistance model; 7.7 Transmission line interconnect model; 7.8 Lossless CNT transmission line model; 7.9 Lossy CNT transmission line model; 7.10 Performance comparison of CNTs and copper interconnects; 7.11 Summary; 7.12 Problem set; 8 Carbon nanotube field-effect transistors; 8.1 Introduction; 8.2 Survey of CNFET device geometries; 8.3 Surface potential; 8.4 Ballistic theory of ohmic-contact CNFETs

8.5 Ballistic theory of CNFETs including drain optical phonon scattering

Notes:

Title from publisher's bibliographic system (viewed on 05 Oct 2015).

Includes bibliographical references and index.

ISBN:

0-511-85169-3

1-107-21616-8

1-282-94205-0

9786612942051

0-511-77812-0

0-511-91793-7

0-511-91695-7

0-511-91891-7

0-511-91514-4

0-511-91335-4

OCLC:

813231522