Transistors : from crystals to integrated circuits / M. Levinshtein & G. Simin ; translated by Minna M. Perelman.

Format:

Book

Author/Creator:

Levinshteĭn, M. E. (Mikhail Efimovich)

Contributor:

Simin, G. S. (Grigoriĭ Solomonovich)

Language:

English

Subjects (All):

Transistors.

Transistor circuits.

Physical Description:

1 online resource (255 p.)

Edition:

1st ed.

Place of Publication:

Singapore ; River Edge, N.J. : World Scientific, c1998.

Language Note:

English

Summary:

This new book by M Levinshtein and G Simin tells the readers about the design and work of the most important and most interesting semiconductor devices - the transistors. The book is written in a friendly and easy to read manner and is meant primarily for young people, high school students, freshmen and sophomores. However, the original approach to semiconductor physics makes this book attractive to physics teachers and professors as well.

Contents:

Preface; Contents; Introduction; Part I Semiconductors; Chapter 1 The Main Properties of Semiconductors; 1.1 Intrinsic Semiconductors; 1.1.1 ""Free electrons"" in crystal; 1.1.2 Holes; 1.1.3 Generation and recombination; 1.2 Impurity Semiconductors; 1.2.1 Donor impurity; 1.2.2 Acceptor impurity; 1.2.3 The temperature dependence of the carrier concentration; 1.2.4 Minority carriers; 1.2.5 Band diagrams; 1.3 Deep Levels; 1.3.1 Compensation by deep levels; 1.3.2 Generation through deep levels; 1.3.3 Recombination through deep levels; 1.4 Summary

Chapter 2 Motion of Electrons and Holes inside the Crystal2.1 Thermal Motion; 2.1.1 Energy distribution of electrons; 2.1.2 Energy distribution of holes; 2.2 Motion in the Electric Field; 2.2.1 ""Hot"" electrons; 2.2.2 Band diagrams; 2.3 Diffusion; 2.3.1 Diffusion coefficient; 2.3.2 Diffusion current; 2.3.3 Diffusion length; 2.4 Summary; Part II Barriers & Junctions; Chapter 3 The Barrier on the Crystal Boundary; 3.1 Work Function; 3.1.1 Come back, return, I call you back!; 3.1.2 Double charged (dipole) layer; 3.1.3 How to define the work function; 3.1.4 What work function is equal to

3.2 Surface States3.3 Bending Bands, Surface Potential; 3.4 Summary; Chapter 4 The Main Parameters of Potential Barriers; 4.1 How the Electric Field Penetrates Into a Metal, Dielectric and Semiconductor; 4.1.1 Why the electric field practically does not penetrate into a metal; 4.1.2 How the electric field penetrates into a dielectric; 4.1.3 In what way and how deep the electric field penetrates into a semiconductor; 4.2 Field Dependence on the Coordinate; 4.3 Poisson's Equation; 4.4 A Few Words about Accumulation Layers; 4.5 Summary; Chapter 5 p-n Junction; 5.1 Ways of Obtaining p-n Junctions

5.1.1 Alloying5.1.2 Diffusion; 5.1.3 Ion implantation; 5.2 Barrier on the Boundary; 5.2.1 The height of the barrier; 5.2.2 Depletion layer. Width of the barrier; 5.2.3 Wonderful equilibrium; 5.2.4 The reverse bias; 5.2.5 The forward bias; 5.3 Summary; Chapter 6 Diodes With The p-n Junctions; 6.1 Photodiodes; 6.2 Variable Capacitors; 6.3 Light-Emitted Diodes; 6.4 Solar Cells; 6.5 Rectifier Diodes; 6.6 Summary; Part III Transistors; Chapter 7 Bipolar Transistors; 7.1 Principle of Operation of a Bipolar Transistor; 7.1.1 Current amplification; 7.1.2 Parable about what is main and what is minute

7.1.3 Speed of response of the transistor7.2 Some Words about the Types and Manufacturing of Bipolar Transistors; 7.3 The Simplest Transistor Circuits; 7.4 Summary; Chapter 8 Field Effect Transistors; 8.1 The Beginning; 8.1.1 The main idea; 8.1.2 Simple estimations; 8.1.3 Old acquaintances; 8.2 Maturity and Flourishing; 8.2.1 JFET (p-n-junction field effect transistor); 8.2.2 Fortune favours the brave. MOSFET; 8.3 Epitaxy; 8.4 A Few Important Details; 8.5 The Work of the FETs in Actual Regimes; 8.5.1 The main parameters of FETs; 8.6 FET as an Element of Electronic Circuits; 8.7 Summary

Chapter 9 Transistors and Life

Notes:

Description based upon print version of record.

Description based on publisher supplied metadata and other sources.

ISBN:

9789810248611

981024861X

OCLC:

863134339