Horizons in computer science research Volume 2 / Thomas S. Clary, editor.

Format:

Book

Contributor:

Clary, Thomas S.

Series:

Horizons in Computer Science

Horizons in computer science research ; 2

Language:

English

Subjects (All):

Computer science--Research.

Computer science.

Computers.

Physical Description:

1 online resource (462 p.)

Place of Publication:

New York : Nova Science Publishers, c2010-

Language Note:

English

Summary:

This book presents original research results on the leading edge of computer science research. Each article has been carefully selected in an attempt to present substantial research results across a broad spectrum.

Contents:

""HORIZONS IN COMPUTER SCIENCE RESEARCH VOLUME 2 ""; ""HORIZONS IN COMPUTER SCIENCE ""; ""HORIZONS IN COMPUTER SCIENCE RESEARCH VOLUME 2 ""; ""CONTENTS ""; ""PREFACE ""; ""WRAPPER DESIGN FOR CDMA SHARED BUS IN SOC ""; ""Abstract ""; ""1. Introduction ""; ""2. Taxonomy of On-Chip Communication ""; ""3. Shared on-Chip Communication Architecture ""; ""4. Interfacing IP Blocks into SoC Using Wrappers ""; ""5. Multiprocessor System Based on CDMA Shared System Bus ""; ""6. CDMA Wrapper Structure ""; ""6.1. Related Works on Bus-Based Wrappers ""

""6.2. Description of Wrapper Structure """"6.3. CDMA Coded Bus Transfer Operations ""; ""7. Design Dilemmas ""; ""8. Experiment Setup ""; ""8.1. Performance Metrics ""; ""Wrapper Performance Metrics ""; ""Data Transfer Latency Ratio ""; ""A. Write Operation ""; ""B. Read Operation ""; ""Metrics Q and R ""; ""9. Experimental Results ""; ""9.1. Wrapper Logic Performance in FPGA ""; ""Absolute Performance ""; ""Relative Performance ""; ""9.2. Data Transfer Latency Performance in FPGA ""; ""9.3. ASIC Implementation ""; ""10. Conclusion ""; ""Acknowledgments ""; ""References ""

""THE FLASH MEMORY BASED ON SILICON NITRIDE (SONOS) """"Abstract ""; ""1. Introduction ""; ""2. Two-Band Conduction Model in The Si3N4, the Drift- Diffusion Approximation ""; ""3. The Traps in the Si3N4 ""; ""3.1. Si Dangling Bond ""; ""3.2. Si-Si Bond ""; ""3.3. N Dangling Bond ""; ""4. Mechanism of the Trap Ionization ""; ""4.1. A Frenkel Model with Thermally Assisted Tunneling ""; ""4.2. The Multiphonon Mechanism Ionization ""; ""5. The Charge Transport in Si3N4. Experiment and Numerical Simulation ""; "" 6. The Threshold Voltage and the Memory Window ""

""7. Typical Write/Erase Characteristics of SONOS """"8. Retention ""; ""9. Optimization of Sonos ""; ""9.1. Using the High-K Dielectric as Blocking Oxide ""; ""9.2. Optimization of the Dielectric Constant of a Blocking Dielectric ""; ""9.3. Using the Triple (Sio2/Si3N4/Sio2) Dielectric as Tunnel Dielectric (BE-SONOS) ""; ""9.4. Using the Gate with Higher Work Function (Tan/Al2O3/Si3N4/Sio2/Si Structure) instead Poly-Si ""; ""9.5. Using Another Material with High Traps Concentration as Charge Storage Material instead of Si N ""

""3.2. Second Didactical Hour: Developing Programs with the Basic Instructions ""

Notes:

Description based upon print version of record.

Includes bibliographical references and index.

ISBN:

1-61761-510-2