Two-step MOVPE, in-situ etching and buried implantation.

Format:

Book

Author/Creator:

della Casa, Pietro.

Series:

Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik

Innovationen mit Mikrowellen und Licht. Forschungsberichte aus dem Ferdinand-Braun-Institut, Leibniz-Institut für Höchstfrequenztechnik ; v.63

Language:

English

Subjects (All):

Etching.

Diodes.

Physical Description:

1 online resource (251 pages)

Edition:

1st ed.

Other Title:

Two-step MOVPE, in-situ etching and buried implantation

Place of Publication:

Göttingen : Cuvillier Verlag, 2021.

Summary:

This work is about two-step epitaxial growth using metalorganic vapor-phase epitaxy (MOVPE) for the realization of edge-emitting near-infrared laser diodes. The fabricated gallium arsenide-based devices fall into two categories: high-power lasers (watt range, multimodal) and tunable lasers (milliwatt range, monomodal). Common to both cases is that surface contamination - particularly that due to oxygen - needs to be removed before regrowth. Thus, in-situ etching with carbon tetrabromide (CBr4) is first studied. The experimental results include kinetic data, the effects of different etching conditions as well as substrate characteristics, and the effectiveness in reducing surface contamination.These investigations pave the way to devices based on 2-step epitaxy combined with in-situ etching. Correspondingly, thermally-tuned SG-DBR lasers operating around 975 nm have been successfully realized, obtaining a tuning range of 21 nm. In addition, the possibility of using electronic tuning in similar devices has been explored.High-power broad-area lasers have also been realized, using two-step epitaxy combined with ex-situ and in-situ etching, to create a buried, shallow "mesa" containing the active zone. This approach allows introducing lateral electrical and optical confinement, and - simultaneously - non-absorbing mirrors at the laser facets.Additionally, a different strategy to create a buried current aperture is presented, which is based on ion implantation followed by epitaxial regrowth. This enables to improve device performance and simultaneously introduce non-absorbing mirrors at the facets with correspondingly increased reliability.

Contents:

Intro

1 Introduction

2 Zincblende III-V semiconductors

2.2 Zincblende crystal structure

2.3 Point defects in III-V semiconductors

2.4 III-V semiconductors and optoelectronics

3 MOVPE growth of III-V compounds

3.1 Introductory remarks on the MOVPE technique

3.2 Planetary reactors AIX2400G3 and AIX2800G4

3.3 Precursors selected for the experimental work

3.4 Dopants and impurities incorporation

4 In-situ etching with CBr4

4.1 Motivation for in-situ etching

4.2 Pre-existing research on in-situ etching

4.3 Investigation of CBr4 etching of GaAs

4.4 Investigation of CBr4 etching of GaAs assisted with TMGa and TMAl

4.5 CBr4 etching of AlGaAs and GaInP

5 SG-DBR tunable lasers

5.1 Chapter introduction

5.2 SG-DBR lasers

5.3 Thermally tuned SG-DBR lasers

5.4 Investigation of electronic tuning

6 Buried-mesa broad-area lasers

6.1 Chapter introduction

6.2 High-power lasers

6.3 Structure and process

6.4 Results and discussion

6.5 Chapter summary and conclusions

7 Lasers with buried implantation

7.1 Chapter introduction

7.2 Ion implantation

7.3 Device description and fabrication procedure

7.4 Material characterization

7.5 Characterization of as-cleaved devices

7.6 Characterization of coated and mounted devices

7.7 Step-stress tests

7.8 Chapter summary and conclusions

8 Summary and outlook

A1 Zincblende III-V semiconductors and related properties

A1.1 Appendix content

A1.2 Composition, bonding and related properties

A1.3 Crystal structure

A1.4 Ternary and higher order compounds

A1.5 Epitaxial multilayers: mismatch, strain, relaxation

A1.6 Defects

A1.7 Electronic structure and related properties

A1.8 Carrier transport

A1.9 Interband transitions

A1.10 Optical properties in the transparency region.

A2 Some general aspects of III-V MOVPE

A2.1 Different III-V epitaxy techniques

A2.2 General considerations about MOVPE reactors

A2.3 Precursors for the growth of arsenides and phosphides

A2.4 Surface processes

A2.5 Stoichiometry, composition and impurity control in MOVPE

A3 Justification of the equations used in modeling the CBr4+TMAl etch

A4 Model for the calculation of αip in the implanted sections

Glossary

References.

Notes:

Description based on publisher supplied metadata and other sources.

ISBN:

9783736963979

3736963971

OCLC:

1246580069