Advances in semiconductor lasers and applications to optoelectronics / editors Mitra Dutta, Michael A. Stroscio.

Format:

Book

Contributor:

Dutta, Mitra.

Stroscio, Michael A., 1949-

Series:

Selected Topics in Electronics and Systems

Selected topics in electronics and systems ; v. 16

Language:

English

Subjects (All):

Semiconductor lasers.

Optoelectronic devices.

Physical Description:

1 online resource (447 p.)

Place of Publication:

Singapore ; River Edge, NJ : World Scientific, c2000.

Language Note:

English

Summary:

This volume includes highlights of the theories underlying the essential phenomena occurring in novel semiconductor lasers as well as the principles of operation of selected heterostructure lasers. To understand scattering processes in heterostructure lasers and related optoelectronic devices, it is essential to consider the role of dimensional confinement of charge carriers as well as acoustical and optical phonons in quantum structures. Indeed, it is important to consider the confinement of both phonons and carriers in the design and modeling of novel semiconductor lasers such as the tunnel

Contents:

FOREWORD; PREFACE TO ""ADVANCES IN SEMICONDUCTOR LASERS AND APPLICATIONS TO OPTOELECTRONICS""; CONTENTS; TUNNEL INJECTION LASERS; 1. Introduction; 2. Hot Carriers in Quantum Well Lasers; 3. Design of a Tunneling Injection Laser; 4. GaAs-Based Tunneling Injection Lasers; 5. InP-Based 1.55 μm Tunneling Injection Lasers; 6. Tunnel Injection Vertical Cavity Surface Emitting Lasers (VCSELs); 7. Conclusion; Acknowledgments; References; QUANTUM WELL INTERSUBBAND LASERS; 1. Introduction; 2. Device Structure and Operation; 3. A Simplified Model of the QCL; 3.1. Electron quasi-bound states

3.2. Intersubband relaxation rates3.3. Tunneling injection and escape; 3.4. Population inversion; 3.5. Transition matrix element; 3.6. Lineshape function; 3.7. Distribution functions; 3.8. Optical gain; 3.9. Threshold current density and output power; 4. Other Intersubband Lasers; 4.1. Optical vs. electrical pumping; 4.2. Step quantum well intersubband lasers; 4.3. Other intersubband laser schemes; 5. Conclusions; References; ADVANCES IN MEASUREMENTS OF PHYSICAL PARAMETERS OF SEMICONDUCTOR LASERS; 1. Introduction; 2. Measurements of the Optical Gain

2.1. Determination of the optical gain from the amplified spontaneous emission2.2. Determination of the optical gain from the true spontaneous emission; 2.3. Determination of the gain in broad-area lasers; 3. Measurement of the Optical Loss; 4. Measurement of the Carrier Leakage in Semiconductor Heterolasers; 4.1. Optical technique of studying the carrier leakage; 4.2. Electrical technique of studying the carrier leakage; 5. Electrical and Optical Measurements of RF Modulation Response Below Threshold; 5.1. Determination of the differential carrier lifetime from the device impedance

5.2. Determination of the differential carrier lifetime from the optical response measurements6. Optical Measurements of RF Modulation Response and RIN Above Threshold; 6.1. Determination of the resonant frequency and damping factor using carrier subtraction technique. Determination of the differential gain and the gain compression coefficient; 6.2. Determination of the resonant frequency and differential gain from the RIN measurements; 7. Measurements of the Linewidth Enhancement Factor; 7.1. Measurements of linewidth enhancement factor αT from ASE and TSE spectra

8. Measurements of the Carrier Temperature and Carrier Heating in Semiconductor Lasers8.1. Determination of carrier heating from wavelength chirp and TSE measurements; Acknowledgments; References; LATERAL INJECTION LASERS; 1. Carrier Injection in Semiconductor Lasers: A Perspective; 2. Motivation for Lateral Injection of Current in Semiconductor Lasers; 2.1. Improving device operation in conventional roles; 2.2. Enabling monolithic integration in optoelectronics and photonics; 2.3. Enabling functional devices

3. Past Work: Transverse Junction Stripe (TJS) and Lateral Current Injection (LCI) Lasers

Notes:

Description based upon print version of record.

Includes bibliographical references.

ISBN:

9789812793614

9812793615