Handbook series on semiconductor parameters / editors, M. Levinshtein, S. Rumyantsev, M. Shur.

Format:

Book

Contributor:

Levinshtein, M.

Rumi︠a︡nt︠s︡ev, S. V. (Stepan Vasilʹevich)

Shur, M.

Series:

Ternary and quaternary III-V compounds ; v. 2

Language:

English

Subjects (All):

Semiconductors--Handbooks, manuals, etc.

Semiconductors.

Physical Description:

1 online resource (224 p.)

Place of Publication:

Singapore : World Scientific Pub. Co., 1999.

Language Note:

English

Summary:

The Handbook Series on Semiconductor Parameters will consist of 5 volumes and will include data on the most popular semiconductor materials. These volumes aim to be a basic reference for scientists, engineers, students and technicians working in semiconductor materials and devices. The books have been kept compact but comprehensive and contain the values of frequently needed parameters selected and commented by leading experts on these materials. The first volume will include data on Si, Ge, diamond, GaAs, GaP, GaSb, InAs, InP, and InSb.

Contents:

CONTENTS; PREFACE; CHAPTER 1 ALUMINIUM GALLIUM ARSENIDE (A1xGa1-xAs); 1.1. Basic Parameters at 300 K; 1.2. Band Structure and Carrier Concentration; 1.2.1. Temperature Dependences; 1.2.2. Dependences on Hydrostatic Pressure (After Adachi [1985]); 1.2.3. Energy Gap Narrowing at High Doping Levels; 1.2.4. Band Discontinuities at AlxGa1-xAs/GaAs Heterointerface; 1.2.5. Effective Masses; 1.2.6. Donors and Acceptors; 1.3. Electrical Properties; 1.3.1. Mobility and Hall Effect; 1.3.2. Two-Dimensional Electron and Hole Gas Mobility at AlxGa1-xAs/GaAs Interface

1.3.3. Transport Properties in High Electric Field1.3.4. Transport Properties of Electron and Hole Two-Dimensional Gas in High Electric Field; 1.3.5. Impact Ionization; 1.3.6. Recombination Parameters; 1.4. Optical Properties; 1.5. Thermal Properties; 1.6. Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties; References; CHAPTER 2 GALLIUM INDIUM PHOSPfflDE (GaxIn(1-x)P); 2.1. Basic Parameters at 300 K; 2.2. Band Structure and Carrier Concentration; 2.2.1. Temperature Dependences; 2.2.2. Dependences on Hydrostatic Pressure

2.2.3. Energy Gap Narrowing at High Doping Levels2.2.4. Band Discontinuities at Heterointerfaces; 2.2.5. Effective Masses; 2.2.6. Donors and Acceptors; 2.3. Electrical Properties; 2.3.1. Mobility and Hall Effect; 2.3.2. Two-Dimensional Electron Gas Mobility at Ga0.5lIn0.49P/GaAs Interface (after Chan et al. [1989]); 2.3.3. Transport Properties in High Electric Fields; 2.3.4. Impact Ionization; 2.3.5. Recombination Parameters; 2.4. Optical Properties; 2.5. Thermal Properties; 2.6. Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties; References

CHAPTER 3 GALLIUM INDIUM ARSENIDE (GaxIn(1-x)As)3.1. Basic Parameters at 300 K; 3.2. Band Structure and Carrier Concentration; 3.2.1. Temperature Dependences; 3.2.2. Dependences on Hydrostatic Pressure; 3.2.4. Band Discontinuities at Heterointerfaces; 3.2.5. Effective Masses; 3.2.6. Donors and Acceptors; 3.3. Electrical Properties; 3.3.1. Mobility and Hall Effect; 3.3.2. Two-Dimensional Electron and Hole Gas Mobility in Heterostructures; 3.3.3. Transport Properties in High Electric Field; 3.3.4. Impact lonization; 3.3.5. Recombination Parameters; 3.4. Optical Properties

3.5. Thermal Properties3.6. Mechanical Properties, Elastic Constants, Lattice Vibrations, Other Properties; References; CHAPTER 4GALLIUM INDIUM ANTIMONDDE (GaxIn(1-x)Sb); 4.1. Basic Parameters at 300 K; 4.2. Band Structure and Carrier Concentration; 4.2.1. Temperature Dependences; 4.2.2. Dependences on Hydrostatic Pressure (After Zitouni et al. [1986]); 4.2.3. Effective Masses; 4.2.4. Donors and Acceptors; 4.3. Electrical Properties; 4.3.1. Mobility and Hall Effect; 4.3.2. Transport Properties in High Electric Field; 4.3.3. Recombination Parameters; 4.4. Optical Properties

4.5. Thermal Propertie:

Notes:

Description based upon print version of record.

Includes bibliographical references.

ISBN:

9789812832085

9812832084

OCLC:

854972524