Wide energy bandgap electronic devices / [edited by] Fan Ren, John C. Zolper.

Format:

Book

Contributor:

Ren, Fan.

Zolper, J. C.

Language:

English

Subjects (All):

Gallium arsenide semiconductors.

Power semiconductors.

Silicon carbide.

Wide gap semiconductors.

Physical Description:

1 online resource (526 p.)

Place of Publication:

River Edge, N.J. : World Scientific, c2003.

Language Note:

English

Summary:

This book provides a summary of the current state-of-the-art in SiC and GaN and identify future areas of development. The remarkable improvements in material quality and device performance in the last few years show the promise of these technologies for areas that Si cannot operate because of it's smaller bandgap. We feel that this collection of chapters provides an excellent introduction to the field and is an outstanding reference for those performing research on wide bandgap semiconductors. In this book, we bring together numerous experts in the field to review progress in SiC and GaN ele

Contents:

CONTENTS ; Preface ; 1. Growth of III-Nitride Semiconductors and Their Characterization ; 1. Introduction ; 2. Substrates Growth Methods and Growth Experiments ; 2.1. Primer on Substrates ; 3. Nitride Growth Techniques ; 3.1. MBE ; 3.2. Vapor Phase Epitaxy

4. Growth of Nitrides by Various Techniques 4.1. Growth by MBE ; 4.2. Growth by HVPE ; 4.3. Growth by MOCVD ; 5. Conclusions ; Acknowledgments ; References ; 2. GaN and AlGaN High Voltage Power Rectifiers ; 1. Introduction

2. GaN Schottky Rectifiers with 3.1 kV Reverse Breakdown Voltage 3. AlGaN Schottky Rectifiers with 4.1 kV Reverse Breakdown Voltage ; 4. Temperature Dependence and Current Transport Mechanisms in AlxGa1-xN Schottky Rectifiers

5. Lateral AlxGa1-xN Power Rectifiers with 9.7 kV Reverse Breakdown Voltage 6. Vertical and Lateral GaN Rectifiers on Free-Standing GaN Substrates ; 7. Comparison of GaN p-i-n and Schottky Rectifiers Performance ; Acknowledgments ; References

3. GaN-Based Power High Electron Mobility Transistors 1. Introduction ; 1.1. Power versus Small-Signal HEMT ; 2. Device Structures and Fabrication ; 2.1. Basic Device Structure ; 2.2. Improved Device Structures ; 2.3. Device Fabrication ; 3. Characteristics ; 3.1. DC Characteristics

3.2. RF Characteristics

Notes:

Description based upon print version of record.

Includes bibliographical references and index.

ISBN:

9786611947903

9781281947901

1281947903

9789812796882

9812796886

OCLC:

815754153