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The handbook on optical constants of semiconductors : in tables and figures / edited by Sadao Adachi.

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Format:
Book
Contributor:
Adachi, Sadao, 1950-
Language:
English
Subjects (All):
Optical constants.
Semiconductors--Optical properties.
Semiconductors.
Physical Description:
1 online resource (632 p.)
Place of Publication:
Singapore ; Hackensack : World Scientific, c2012.
Language Note:
English
Summary:
Knowledge of the refractive indices and absorption coefficients of semiconductors is especially important in the design and analysis of optical and photonic devices. This book presents data on the optical constants of various elemental and compound semiconductors. A complete set of the optical constants of the semiconductors are presented in tabular and graphical forms over the entire photon-energy range. They are: the complex dielectric constant e(E)=e1(E)+ie2(E), the complex refractive index n*(E)=n(E)+ik(E), the absorption coefficient a(E), and the normal-incidence reflectivity R(E). The bo
Contents:
Preface; CONTENTS; 1 Introduction; 1.1 Classification of Semiconductors: Grimm-Sommerfeld Rule; 1.2 Crystal Structure; 1.2.1 Atomic Bond; 1.2.2 Crystal Structure; 1.3 Dielectric Function: Tensor Representation; 1.4 Optical Dispersion Relations; 1.5 Optical Sum Rules; 1.5.1 Inertial Sum Rule; 1.5.2 dc-Conductivity Sum Rule; 1.5.3 f-Sum Rule; 1.6 Optical Spectra; 1.6.1 Classification into Several Regions; 1.6.2 The Reststrahlen Region; 1.6.3 The Transparent and Interband Transition Regions; (a) Critical point; (b) The transparent region; (c) The interband transition region; References
2 Elemental Semiconductors2.1 Group-IV Elemental Semiconductors; 2.1.1 Diamond (C); References; 2.1.2 Silicon (Si); References; 2.1.3 Germanium (Ge); References; 2.1.4 Gray Tin (a-Sn); References; 2.2 Group-VI Elemental Semiconductors; 2.2.1 Selenium (Se); References; 2.2.2 Tellurium (Te); References; 3 Valence Binary Semiconductors I; 3.1 IV-IV Binary Semiconductors; 3.1.1 Cubic Silicon Carbide (3C-SiC); References; 3.1.2 Hexagonal Silicon Carbides (4H- and 6H-SiC); References; 3.1.3 Rhombohedral Silicon Carbide (15R-SiC); References; 3.2 III-V Binary Semiconductors
3.2.1 Cubic Boron Nitride (c-BN)References; 3.2.2 Hexagonal Boron Nitride (h-BN); References; 3.2.3 Wurtzite Aluminum Nitride (w-AlN); References; 3.2.4 Cubic Aluminum Nitride (c-AlN); References; 3.2.5 Aluminum Phosphide (AlP); References; 3.2.6 Aluminum Arsenide (AlAs); References; 3.2.7 Aluminum Antimonide (AlSb); References; 3.2.8 Wurtzite Gallium Nitride ( -GaN); References; 3.2.9 Cubic Gallium Nitride ( -GaN); References; 3.2.10 Gallium Phosphide (GaP); References; 3.2.11 Gallium Arsenide (GaAs); References; 3.2.12 Gallium Antimonide (GaSb); References
3.2.13 Wurtzite Indium Nitride (w-InN)References; 3.2.14 Cubic Indium Nitride (c-InN); References; 3.2.15 Indium Phosphide (InP); References; 3.2.16 Indium Arsenide (InAs); References; 3.2.17 Indium Antimonide (InSb); References; 3.3 II-VI Binary Semiconductors; 3.3.1 Magnesium Oxide (MgO); References; 3.3.2 Zinc Oxide (ZnO); References; 3.3.3 Wurtzite Zinc Sulphide (a-ZnS); References; 3.3.4 Cubic Zinc Sulphide (b-ZnS); References; 3.3.5 Zinc Selenide (ZnSe); References; 3.3.6 Zinc Telluride (ZnTe); References; 3.3.7 Cadmium Oxide (CdO); References; 3.3.8 Cubic Cadmium Sulphide (c-CdS)
References3.3.9 Wurtzite Cadmium Sulphide (w-CdS); References; 3.3.10 Cubic Cadmium Selenide (c-CdSe); References; 3.3.11 Wurtzite Cadmium Selenide (w-CdSe); References; 3.3.12 Cadmium Telluride (CdTe); References; 3.3.13 Mercury Selenide (HgSe); References; 3.3.14 Mercury Telluride (HgTe); References; 4 Valence Binary Semiconductors II; 4.1 IV-VI2 Binary Semiconductors; 4.1.1 Tin Dioxide (SnO2); References; 4.1.2 Tin Disulphide (SnS2); References; 4.1.3 Tin Diselenide (SnSe2); References; 4.2 II-VII2 Binary Semiconductors; 4.2.1 Cadmiun Diiodide (CdI2); References
4.2.2 Mercury Diiodide (HgI2)
Notes:
Description based upon print version of record.
Includes bibliographical references.
ISBN:
1-283-85084-2
981-4405-98-1
OCLC:
994929863

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