Gettering and defect engineering in semiconductor technology XVI : selected, peer reviewed papers from the GADEST 2015 : Gettering and Defect Engineering in Semiconductor Technology September 20-25, 2015, Bad Staffelstein, Germany / edited by P. Pichler.

Format:

Book

Conference/Event

Contributor:

Pichler, P., editor.

Conference Name:

GADEST (Conference) (2015 : Bad Staffelstein, Germany)

Series:

Diffusion and defect data. Solid state phenomena ; Pt. B, Volume 242.

Solid State Phenomena, 1662-9779 ; Volume 242

Language:

English

Subjects (All):

Semiconductors--Defects--Congresses.

Semiconductors.

Getters--Congresses.

Getters.

Physical Description:

1 online resource (492 pages) : illustrations, graphs.

Edition:

1st ed.

Place of Publication:

Pfaffikon, Switzerland : Trans Tech Publications Ltd, 2016.

Summary:

Selected, peer reviewed papers from the GADEST 2015: Gettering and Defect Engineering in Semiconductor Technology, September 20-25, 2015, Bad Staffelstein, Germany.

Contents:

Intro

Gettering and Defect Engineering in Semiconductor Technology XVI

Preface and Committees

Table of Contents

Chapter 1: Growth of Mono- and Multi-Crystalline Silicon

Growth of Czochralski Silicon Crystals Having Ultralow Carbon Concentrations

Electrically Inactive Dopants in Heavily Doped As-Grown Czochralski Silicon

Orientation Dependency of Dislocation Generation in Si Growth Process

Recent Progress of Crystal Growth Technology for Multi-Crystalline Silicon Solar Ingot

50 cm Size Seed Cast Si Ingot Growth and its Characterization

Statistical Consideration of Grain Growth Mechanism of Multicrystalline Si by One-Directional Solidification Technique

Potential Synthesis of Solar-Grade Silicon from Rice Husk Ash

Chapter 2: Passivation and Defect Studies in Solar Cells

Valence-Mending Passivation of Si(100) Surface: Principle, Practice and Application

Impact of the Gate Material on the Deep Levels in a-Si:H/c-Si Metal-Insulator-Semiconductor Capacitors

Stable, Extrinsic, Field Effect Passivation for Back Contact Silicon Solar Cells

Investigation of Parasitic Edge Recombination in High-Lifetime Oxidized n-Si

BO-Related Defects: Overcoming Bulk Lifetime Degradation in Crystalline Si by Regeneration

Discussion of ASi-Sii-Defect Model in Frame of Experimental Results on P Line in Indium Doped Silicon

Investigation into Efficiency-Limiting Defects in mc-Si Solar Cells

Experimental Proof of the Slow Light-Induced Degradation Component in Compensated n-Type Silicon

Low Temperature Internal Gettering of Bulk Defects in Silicon Photovoltaic Materials

Low Temperature Activation of Grown-In Defects Limiting the Lifetime of High Purity n-Type Float-Zone Silicon Wafers

Minority Carrier Lifetime Improvement of Multicrystalline Silicon Using Combined Saw Damage Gettering and Emitter Formation.

Chapter 3: Intrinsic Point Defects and Dislocations in Silicon

Vacancy Species Produced by Rapid Thermal Annealing of Silicon Wafers

Electronic Properties of Dislocations

Interplay of Ni and Au Atoms with Dislocations and Vacancy Defects Generated by Moving Dislocations in Si

Spatial Distribution of the Dislocation Trails in Silicon

Chapter 4: Light Elements in Silicon-Based Materials

Hydrogen-Vacancy Complexes and their Deep States in n-Type Silicon

Metastable Defects in Proton Implanted and Annealed Silicon

The Efficiency of Hydrogen-Doping as a Function of Implantation Temperature

Carbon-Hydrogen Complexes in n- and p-Type SiGe-Alloys Studied by Laplace Deep Level Transient Spectroscopy

Determination of the Free Gibbs Energy of Plate-Like Precipitates of Hydrogen Molecules and Silicon Vacancies Formed after H+ Ion Implantation into Silicon and Annealing

Kinetic Model of Precipitate Growth during Phase Separation in Metastable Binary Solid Solutions

Chapter 5: Properties and Gettering of Transition Metals in Silicon

Direct Observations of Fe Impurities in Si with Different Fermi Levels by Mössbauer Spectroscopy

Mössbauer Spectroscopy on Fe Impurities in Si Materials

Enhanced Internal Gettering of Iron in n/n+ Epitaxial Silicon Wafer: Effect of High Temperature Rapid Thermal Annealing in Nitrogen Ambient

A Density Functional Study of Iron Segregation at ISFs and Σ5-(001) GBs in mc-Si

Determination of Activation Energy of the Iron Acceptor Pair Association and Dissociation Reaction

Internal Gettering of Copper for Microelectronic Applications

Segregation Gettering Model for Nickel in p/p+ Silicon Wafers

Detection and Prevention of Palladium Contamination in Silicon Devices

Modeling the Post-Implantation Annealing of Platinum.

Electrical Levels and Diffusion Barriers of Early 3d and 4d Transition Metals in Silicon

Search for Effective Sites of Proximity Gettering Induced by Ion Implantation in Si Wafers with First Principles Calculation

Chapter 6: Radiation- and Impurity-Related Defect Studies in Silicon and Germanium

Effect of Nitrogen-Doping on the Properties of Radiation Defect Centers in FZ Silicon

Boron-Related Defects in Low Temperature Irradiated Silicon

Structure, Electronic Properties and Annealing Behavior of Di-Interstitial-Oxygen Center in Silicon

Similarity of Atomic Configurations of Thermally Stable Positron-Sensitive Complexes Produced with 0.9-MeV Electrons and 15-MeV Protons in n-FZ-Si:P Crystals

Interstitial Carbon in p-Type Copper-Doped Silicon

Interaction of Interstitial Copper with Isolated Vacancies in Silicon

Characterization of Si Convertors of Beta-Radiation in the Scanning Electron Microscope

Electrical Properties of Defects in Ga-Doped Ge Irradiated with Fast Electrons and Protons

Spin Relaxation Times of Donor Centers Associated with Lithium in Monoisotopic 28 Si

The Impurity Spin-Dependent Scattering Effects in the Transport and Spin Resonance of Conduction Electrons in Bismuth Doped Silicon

Chapter 7: Thermal Properties of Semiconductors

Heat Flow and Defects in Semiconductors: beyond the Phonon Scattering Assumption

Reduced Thermal Conductivity in Silicon Thin-Films via Vacancies

Chapter 8: Luminescence and Optical Properties of Semiconductors

Ge and GeSn Light Emitters on Si

Analysis of EL Emitted by LEDs on Si Substrates Containing GeSn/Ge Multi Quantum Wells as Active Layers

Electrical Characterization and Defect-Related Luminescence in Oxygen Implanted Silicon

Defect Formation in Ion-Implanted Si - Approach to Controlled Semiconductor Optical Properties.

Chapter 9: Nano-Sized Layers and Structures

A Nanoscale Adventure with Silicon: Synthesis, Surface Chemistry, and other Surprises

Defect Composition in Acceptor Doped ZnO Quantum Structures

ZnO Nanoparticle Formation in 64Zn+ Ion Implanted Al2O3

Misfit Dislocation Free Epitaxial Growth of SiGe on Compliant Nano-Structured Silicon

Influence of Composition of Aqueous Electrolytes on Anisotropy of Porous Layer Formation Rate in Heavily Doped Silicon

Chapter 10: Wide-Bandgap Semiconductors

Investigations of Critical Structural Defects in Active Layers of GaN-on-Si for Power Electronic Devices

Radiation Damage in 4H-SiC and its Effect on Power Device Characteristics

Electrical Characterization of Defects Introduced in n-Type N-Doped 4H-SiC during Electron Beam Exposure

A New Approach for Calculating the Band Gap of Semiconductors within the Density Functional Method

Ab Initio Study of MgSe Self-Interstitial (Mgi and Sei)

Chapter 11: Advanced Methods and Tools for Investigation of Semiconductor Materials

Low-Frequency Noise Spectroscopy of Bulk and Border Traps in Nanoscale Devices

Capacitance Transient Spectroscopy Measurements on High-k Metal Gate Field Effect Transistors Fabricated Using 28nm Technology Node

Comparative Investigations of the Surface Damage of Monocrystalline Silicon Wafers by Scanning Infrared Reflection Examination and Raman Spectroscopy

Non-Visual Defect Monitoring with Surface Voltage Mapping: Application for Semiconductor IC and PV Technology

Comparative Spatially Resolved Characterization of a Czochralski-Grown Silicon Crystal by Different Laser-Based Imaging Techniques

Imaging Defect Luminescence of 4H-SiC by Ultraviolet-Photoluminescence

Keywords Index

Authors Index.

Notes:

Includes bibliographical references at the end of each chapters and indexes.

Description based on online resource; title from PDF title page (ebrary, viewed September 26, 2016).

Description based on publisher supplied metadata and other sources.

ISBN:

3-0357-0083-4

OCLC:

935335014