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The Source/Drain Engineering of Nanoscale Germanium-based MOS Devices / by Zhiqiang Li.
- Format:
- Book
- Author/Creator:
- Li, Zhiqiang, Author.
- Series:
- Springer Theses, Recognizing Outstanding Ph.D. Research, 2190-5053
- Language:
- English
- Subjects (All):
- Semiconductors.
- Electronic circuits.
- Nanoscience.
- Nanostructures.
- Solid state physics.
- Electronic Circuits and Devices.
- Nanoscale Science and Technology.
- Solid State Physics.
- Local Subjects:
- Semiconductors.
- Electronic Circuits and Devices.
- Nanoscale Science and Technology.
- Solid State Physics.
- Physical Description:
- 1 online resource (71 p.)
- Edition:
- 1st ed. 2016.
- Place of Publication:
- Berlin, Heidelberg : Springer Berlin Heidelberg : Imprint: Springer, 2016.
- Language Note:
- English
- Summary:
- This book mainly focuses on reducing the high parasitic resistance in the source/drain of germanium nMOSFET. With adopting of the Implantation After Germanide (IAG) technique, P and Sb co-implantation technique and Multiple Implantation and Multiple Annealing (MIMA) technique, the electron Schottky barrier height of NiGe/Ge contact is modulated to 0.1eV, the thermal stability of NiGe is improved to 600℃ and the contact resistivity of metal/n-Ge contact is drastically reduced to 3.8×10−7Ω•cm2, respectively. Besides, a reduced source/drain parasitic resistance is demonstrated in the fabricated Ge nMOSFET. Readers will find useful information about the source/drain engineering technique for high-performance CMOS devices at future technology node.
- Contents:
- Introduction
- Ge-based Schottky barrier height modulation technology
- Metal germanide technology
- Contact resistance of Ge-based devices
- Conclusions.
- Notes:
- Description based upon print version of record.
- Includes bibliographical references.
- ISBN:
- 3-662-49683-6
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