Ti-Sb-Te Phase Change Materials: Component Optimisation, Mechanism and Applications / by Min Zhu.

Format:

Book

Author/Creator:

Zhu, Min., Author.

Series:

Springer Theses, Recognizing Outstanding Ph.D. Research, 2190-5053

Language:

English

Subjects (All):

Semiconductors.

Electronic circuits.

Electronics.

Microelectronics.

Phase transformations (Statistical physics).

Electronic Circuits and Devices.

Electronics and Microelectronics, Instrumentation.

Phase Transitions and Multiphase Systems.

Local Subjects:

Semiconductors.

Electronic Circuits and Devices.

Electronics and Microelectronics, Instrumentation.

Phase Transitions and Multiphase Systems.

Physical Description:

1 online resource (XVI, 124 p. 83 illus.)

Edition:

1st ed. 2017.

Place of Publication:

Singapore : Springer Singapore : Imprint: Springer, 2017.

Summary:

This book introduces a novel Ti-Sb-Te alloy for high-speed and low-power phase-change memory applications, which demonstrates a phase-change mechanism that differs significantly from that of conventional Ge2Sb2Te5 and yields favorable overall performance. Systematic methods, combined with better material characteristics, are used to optimize the material components and device performance. Subsequently, a phase-change memory chip based on the optimized component is successfully fabricated using 40-nm complementary metal-oxide semiconductor technology, which offers a number of advantages in many embedded applications.

Contents:

Acknowledge

Abstract

Introduction

Component Optimization of Sb-Te in Ti-Sb-Te Phase Change Materials

Component Optimization of Ti in Ti-Sb2Te3 Phase Change Materials

Optimization Component Ti0.43Sb2Te3

Influence of Temperature on Performance of Ti0.43Sb2Te3 Based Device

Phase Change Mechanism of Ti0.43Sb2Te3 Alloy

Ti0.43Sb2Te3 Based Phase Change Memory Chip

Summary

References

Published Papers and Patents

Bibliography.

Notes:

Includes bibliographical references at the end of each chapters.

ISBN:

981-10-4382-5